JPS56105746A - Transportation method of dopant in vapor phase growth - Google Patents

Transportation method of dopant in vapor phase growth

Info

Publication number
JPS56105746A
JPS56105746A JP808980A JP808980A JPS56105746A JP S56105746 A JPS56105746 A JP S56105746A JP 808980 A JP808980 A JP 808980A JP 808980 A JP808980 A JP 808980A JP S56105746 A JPS56105746 A JP S56105746A
Authority
JP
Japan
Prior art keywords
reaction furnace
dopant
gas
vapor phase
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP808980A
Other languages
Japanese (ja)
Inventor
Tomofumi Yoshitake
Daijiro Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP808980A priority Critical patent/JPS56105746A/en
Publication of JPS56105746A publication Critical patent/JPS56105746A/en
Pending legal-status Critical Current

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  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To increase the purity of a vapor phase growth layer by inducing dopant gas from the side of low temperature and minimizing thermal cracking of the dopant.
CONSTITUTION: Ga source 23 is set on upper high temperature part 22a of reaction furnace 21 as a raw material. The solution stored in gas washing bottle 25 is bubbled by H2 gas and fed from the upper side of reaction furnace 21 through transportation pipe 21. The solution in gas washing bottle 29 is bubbled by H2 has and fed from transportation pipe 28 which is inserted into reaction furnace 21 from the more lower side of downstream low-temperature part 22b of reaction furnace 21. Since the solution in gas washing bottle 29 does not pass through high temperature part 22a, a crystal growth layer which has high purity and little sticking phenomenon to the pipe wall can be obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP808980A 1980-01-26 1980-01-26 Transportation method of dopant in vapor phase growth Pending JPS56105746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP808980A JPS56105746A (en) 1980-01-26 1980-01-26 Transportation method of dopant in vapor phase growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP808980A JPS56105746A (en) 1980-01-26 1980-01-26 Transportation method of dopant in vapor phase growth

Publications (1)

Publication Number Publication Date
JPS56105746A true JPS56105746A (en) 1981-08-22

Family

ID=11683592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP808980A Pending JPS56105746A (en) 1980-01-26 1980-01-26 Transportation method of dopant in vapor phase growth

Country Status (1)

Country Link
JP (1) JPS56105746A (en)

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