JPS56105673A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56105673A
JPS56105673A JP854180A JP854180A JPS56105673A JP S56105673 A JPS56105673 A JP S56105673A JP 854180 A JP854180 A JP 854180A JP 854180 A JP854180 A JP 854180A JP S56105673 A JPS56105673 A JP S56105673A
Authority
JP
Japan
Prior art keywords
type
gate
layer
film
trigger current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP854180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6152991B2 (cs
Inventor
Iwao Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP854180A priority Critical patent/JPS56105673A/ja
Publication of JPS56105673A publication Critical patent/JPS56105673A/ja
Publication of JPS6152991B2 publication Critical patent/JPS6152991B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors

Landscapes

  • Thyristors (AREA)
JP854180A 1980-01-28 1980-01-28 Semiconductor device Granted JPS56105673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP854180A JPS56105673A (en) 1980-01-28 1980-01-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP854180A JPS56105673A (en) 1980-01-28 1980-01-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56105673A true JPS56105673A (en) 1981-08-22
JPS6152991B2 JPS6152991B2 (cs) 1986-11-15

Family

ID=11696005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP854180A Granted JPS56105673A (en) 1980-01-28 1980-01-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56105673A (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6397251U (cs) * 1986-12-15 1988-06-23
US4942446A (en) * 1986-02-27 1990-07-17 Kabushiki Kaisha Toshiba Semiconductor device for switching, and the manufacturing method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4942446A (en) * 1986-02-27 1990-07-17 Kabushiki Kaisha Toshiba Semiconductor device for switching, and the manufacturing method therefor
JPS6397251U (cs) * 1986-12-15 1988-06-23

Also Published As

Publication number Publication date
JPS6152991B2 (cs) 1986-11-15

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