JPS56101765A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS56101765A JPS56101765A JP495980A JP495980A JPS56101765A JP S56101765 A JPS56101765 A JP S56101765A JP 495980 A JP495980 A JP 495980A JP 495980 A JP495980 A JP 495980A JP S56101765 A JPS56101765 A JP S56101765A
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- high resistance
- resistance element
- oxide
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 239000001117 sulphuric acid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Local Oxidation Of Silicon (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the density of integration in a MOSIC by the formation of a high resistance element composed of a silicon oxide film in the contact hole. CONSTITUTION:After a thick oxide silicon film 2, an oxide silicon film 3 as a gate insulating film and a polycrystalline silicon film 4 as a gate electrode are formed on a semiconductor substrate 1, a source drain region 6 is formed with the introduction of impurities. Next an oxide silicon film 7 is grown and formed in the gaseous phase. This sample is treated with heated sulphuric acid or nitric acid to use an oxide silicon film 9 formed on the exposed substrate as a high resistance element. In addition, a polycrystalline silicon film 10 is formed for the improvement of the stability of the element, which is followed by the formation of a wiring region 8, using a conductive material. By so doing, it is possible to provide a high resistance element in the contact hole, and this is tantamount to practically nullifying an area for the high resistance element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP495980A JPS56101765A (en) | 1980-01-18 | 1980-01-18 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP495980A JPS56101765A (en) | 1980-01-18 | 1980-01-18 | Manufacture of semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56101765A true JPS56101765A (en) | 1981-08-14 |
Family
ID=11598111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP495980A Pending JPS56101765A (en) | 1980-01-18 | 1980-01-18 | Manufacture of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56101765A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009534588A (en) * | 2006-04-19 | 2009-09-24 | タオ、ニン | Double gear drive mechanism of reel unit |
-
1980
- 1980-01-18 JP JP495980A patent/JPS56101765A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009534588A (en) * | 2006-04-19 | 2009-09-24 | タオ、ニン | Double gear drive mechanism of reel unit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6451665A (en) | Semiconductor device | |
| JPS6421967A (en) | Semiconductor device and manufacture thereof | |
| JPS5643749A (en) | Semiconductor device and its manufacture | |
| JPS56101765A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5750466A (en) | Semiconductor memory device | |
| JPS54141585A (en) | Semiconductor integrated circuit device | |
| JPS5764965A (en) | Semiconductor device | |
| JPS56146232A (en) | Manufacture of semiconductor device | |
| JPS5585041A (en) | Semiconductor device and its preparation | |
| JPS56125875A (en) | Semiconductor integrated circuit device | |
| JPS5485686A (en) | Semiconductor integrated circuit device | |
| JPS5519855A (en) | Thin film condenser and manufacture thereof | |
| JPS57114287A (en) | Semiconductor device | |
| JPS5346287A (en) | Production of semiconductor integrated circuit | |
| JPS55160455A (en) | Manufacture of insulated gate type field effect semiconductor device | |
| JPS55148422A (en) | Manufacturing of semiconductor device | |
| JPS5269585A (en) | Semiconductor device | |
| JPS57196576A (en) | Semiconductor device and high tension circuit using it | |
| JPS5740973A (en) | Inverter circuit and manufacture therefor | |
| JPS5481087A (en) | Seiconductor integrated circuit | |
| JPS5796568A (en) | Semiconductor device and high-voltage circuit using said device | |
| JPS56116671A (en) | Semiconductor device | |
| JPS55151365A (en) | Insulated gate type transistor and semiconductor integrated circuit | |
| JPS5493980A (en) | Field-effect semicoductor device | |
| JPS5633869A (en) | Manufacture of resistance element |