JPS559433A - Electron beam exposure device - Google Patents

Electron beam exposure device

Info

Publication number
JPS559433A
JPS559433A JP8209578A JP8209578A JPS559433A JP S559433 A JPS559433 A JP S559433A JP 8209578 A JP8209578 A JP 8209578A JP 8209578 A JP8209578 A JP 8209578A JP S559433 A JPS559433 A JP S559433A
Authority
JP
Japan
Prior art keywords
pattern data
cell
basic
patterns
drawn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8209578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6348175B2 (enrdf_load_stackoverflow
Inventor
Yutaka Hitai
Nobuo Okuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8209578A priority Critical patent/JPS559433A/ja
Priority to US06/053,215 priority patent/US4280186A/en
Priority to DE2927413A priority patent/DE2927413C2/de
Publication of JPS559433A publication Critical patent/JPS559433A/ja
Publication of JPS6348175B2 publication Critical patent/JPS6348175B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T17/00—Three dimensional [3D] modelling, e.g. data description of 3D objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Computer Graphics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP8209578A 1978-07-07 1978-07-07 Electron beam exposure device Granted JPS559433A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8209578A JPS559433A (en) 1978-07-07 1978-07-07 Electron beam exposure device
US06/053,215 US4280186A (en) 1978-07-07 1979-06-29 Exposure apparatus using electron beams
DE2927413A DE2927413C2 (de) 1978-07-07 1979-07-06 Elektronenstrahl-Belichtungsvorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8209578A JPS559433A (en) 1978-07-07 1978-07-07 Electron beam exposure device

Publications (2)

Publication Number Publication Date
JPS559433A true JPS559433A (en) 1980-01-23
JPS6348175B2 JPS6348175B2 (enrdf_load_stackoverflow) 1988-09-28

Family

ID=13764858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8209578A Granted JPS559433A (en) 1978-07-07 1978-07-07 Electron beam exposure device

Country Status (1)

Country Link
JP (1) JPS559433A (enrdf_load_stackoverflow)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857726A (ja) * 1981-10-01 1983-04-06 Toshiba Mach Co Ltd 電子ビ−ム描画制御装置
FR2514199A1 (fr) * 1981-10-05 1983-04-08 Varian Associates Systeme d'exploitation d'informations de motif pour un systeme d'exposition a faisceau d'electrons
JPS5870532A (ja) * 1981-10-22 1983-04-27 Toshiba Mach Co Ltd 電子ビ−ム描画制御装置
JPS6394623A (ja) * 1986-10-09 1988-04-25 Hitachi Ltd 描画装置
DE10243827A1 (de) * 2002-09-14 2004-03-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Direktschreibendes Lithographieverfahren zur Herstellung einer zweidimensionalen Struktur im Submikrometerbereich
US6828078B2 (en) 2000-08-29 2004-12-07 Jsr Corporation Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern
US7071255B2 (en) 2001-02-19 2006-07-04 Jsr Corporation Radiation-sensitive composition capable of having refractive index distribution
US7108954B2 (en) 2000-12-11 2006-09-19 Jsr Corporation Radiation-sensitive composition changing in refractive index and method of changing refractive index
US7125647B2 (en) 2001-03-13 2006-10-24 Jsr Corporation Radiation-sensitive composition changing in refractive index and utilization thereof
US7205085B2 (en) 2001-08-01 2007-04-17 Jsr Corporation Composition having permitivity being radiation-sensitively changeable and method for forming permitivity pattern
JP2007199385A (ja) * 2006-01-26 2007-08-09 Hitachi Via Mechanics Ltd プリント配線基板用描画装置
JP2008034439A (ja) * 2006-07-26 2008-02-14 Nuflare Technology Inc 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2016076654A (ja) * 2014-10-08 2016-05-12 株式会社ニューフレアテクノロジー 描画データ生成方法、プログラム、マルチ荷電粒子ビーム描画装置、及びパターン検査装置
EP3284599A1 (en) 2004-01-09 2018-02-21 Fujifilm Corporation Lithographic printing plate precursor and lithographic printing method using the same
JP2019117961A (ja) * 2019-04-25 2019-07-18 株式会社ニューフレアテクノロジー 描画データ生成方法、プログラム、マルチ荷電粒子ビーム描画装置、及びパターン検査装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145865A (enrdf_load_stackoverflow) * 1974-04-18 1975-11-22
JPS51147967A (en) * 1975-06-14 1976-12-18 Fujitsu Ltd Method of controlling spot exposure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145865A (enrdf_load_stackoverflow) * 1974-04-18 1975-11-22
JPS51147967A (en) * 1975-06-14 1976-12-18 Fujitsu Ltd Method of controlling spot exposure

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857726A (ja) * 1981-10-01 1983-04-06 Toshiba Mach Co Ltd 電子ビ−ム描画制御装置
FR2514199A1 (fr) * 1981-10-05 1983-04-08 Varian Associates Systeme d'exploitation d'informations de motif pour un systeme d'exposition a faisceau d'electrons
JPS5870532A (ja) * 1981-10-22 1983-04-27 Toshiba Mach Co Ltd 電子ビ−ム描画制御装置
JPS6394623A (ja) * 1986-10-09 1988-04-25 Hitachi Ltd 描画装置
US6828078B2 (en) 2000-08-29 2004-12-07 Jsr Corporation Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern
US7108954B2 (en) 2000-12-11 2006-09-19 Jsr Corporation Radiation-sensitive composition changing in refractive index and method of changing refractive index
US7071255B2 (en) 2001-02-19 2006-07-04 Jsr Corporation Radiation-sensitive composition capable of having refractive index distribution
US7125647B2 (en) 2001-03-13 2006-10-24 Jsr Corporation Radiation-sensitive composition changing in refractive index and utilization thereof
US7205085B2 (en) 2001-08-01 2007-04-17 Jsr Corporation Composition having permitivity being radiation-sensitively changeable and method for forming permitivity pattern
DE10243827A1 (de) * 2002-09-14 2004-03-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Direktschreibendes Lithographieverfahren zur Herstellung einer zweidimensionalen Struktur im Submikrometerbereich
DE10243827B4 (de) * 2002-09-14 2004-09-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Direktschreibendes Elektronenstrahl - Lithographieverfahren zur Herstellung einer zweidimensionalen Struktur im Submikrometerbereich
EP3284599A1 (en) 2004-01-09 2018-02-21 Fujifilm Corporation Lithographic printing plate precursor and lithographic printing method using the same
JP2007199385A (ja) * 2006-01-26 2007-08-09 Hitachi Via Mechanics Ltd プリント配線基板用描画装置
JP2008034439A (ja) * 2006-07-26 2008-02-14 Nuflare Technology Inc 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2016076654A (ja) * 2014-10-08 2016-05-12 株式会社ニューフレアテクノロジー 描画データ生成方法、プログラム、マルチ荷電粒子ビーム描画装置、及びパターン検査装置
JP2019117961A (ja) * 2019-04-25 2019-07-18 株式会社ニューフレアテクノロジー 描画データ生成方法、プログラム、マルチ荷電粒子ビーム描画装置、及びパターン検査装置

Also Published As

Publication number Publication date
JPS6348175B2 (enrdf_load_stackoverflow) 1988-09-28

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