JPS5593263A - Bidirectional semiconductor device - Google Patents
Bidirectional semiconductor deviceInfo
- Publication number
- JPS5593263A JPS5593263A JP67979A JP67979A JPS5593263A JP S5593263 A JPS5593263 A JP S5593263A JP 67979 A JP67979 A JP 67979A JP 67979 A JP67979 A JP 67979A JP S5593263 A JPS5593263 A JP S5593263A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- electrode
- neg
- characteristic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002457 bidirectional effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP67979A JPS6043671B2 (ja) | 1979-01-10 | 1979-01-10 | 双方向性半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP67979A JPS6043671B2 (ja) | 1979-01-10 | 1979-01-10 | 双方向性半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5593263A true JPS5593263A (en) | 1980-07-15 |
JPS6043671B2 JPS6043671B2 (ja) | 1985-09-30 |
Family
ID=11480432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP67979A Expired JPS6043671B2 (ja) | 1979-01-10 | 1979-01-10 | 双方向性半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6043671B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60247970A (ja) * | 1984-05-23 | 1985-12-07 | Toshiba Corp | 双方向性半導体装置 |
EP0341730A2 (en) * | 1988-05-13 | 1989-11-15 | Kabushiki Kaisha Toshiba | Gate-controlled bidirectional semiconductor switching device |
-
1979
- 1979-01-10 JP JP67979A patent/JPS6043671B2/ja not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60247970A (ja) * | 1984-05-23 | 1985-12-07 | Toshiba Corp | 双方向性半導体装置 |
EP0341730A2 (en) * | 1988-05-13 | 1989-11-15 | Kabushiki Kaisha Toshiba | Gate-controlled bidirectional semiconductor switching device |
Also Published As
Publication number | Publication date |
---|---|
JPS6043671B2 (ja) | 1985-09-30 |
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