JPS5591157A - Mos dynamic memory - Google Patents
Mos dynamic memoryInfo
- Publication number
- JPS5591157A JPS5591157A JP16499378A JP16499378A JPS5591157A JP S5591157 A JPS5591157 A JP S5591157A JP 16499378 A JP16499378 A JP 16499378A JP 16499378 A JP16499378 A JP 16499378A JP S5591157 A JPS5591157 A JP S5591157A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- charge storage
- memory
- conductivity type
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To obtain an IC memory having large operating allowance by employing a substrate having low impurity density and implanting the same conductivity type ion as the substrate to selecting FET portion excluding the lower portion of charge storage electrode. CONSTITUTION:A polycrystalline silicon layer serving as a cell charge storage electrode G2 is selectively formed on a substrate having low impurity density, and used as a mask to implant the same conductivity type ion as the substrate on a silicon layer. Thus, the charge storage portion incorporates a low threshold voltage, and the other portion incorporates a high threshold voltage to thereby write more charges than heretofore. In this case it is necessary to set the high (H) level of a word line WL higher than the power supply voltage when the threshold Vth of an FET transistor Q1 is high. This memory can prevent leakage of stored charge, provide long refreshing time and large operating allowance according to this configuration.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16499378A JPS5591157A (en) | 1978-12-27 | 1978-12-27 | Mos dynamic memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16499378A JPS5591157A (en) | 1978-12-27 | 1978-12-27 | Mos dynamic memory |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5591157A true JPS5591157A (en) | 1980-07-10 |
Family
ID=15803794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16499378A Pending JPS5591157A (en) | 1978-12-27 | 1978-12-27 | Mos dynamic memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591157A (en) |
-
1978
- 1978-12-27 JP JP16499378A patent/JPS5591157A/en active Pending
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