JPS55901B2 - - Google Patents

Info

Publication number
JPS55901B2
JPS55901B2 JP6530074A JP6530074A JPS55901B2 JP S55901 B2 JPS55901 B2 JP S55901B2 JP 6530074 A JP6530074 A JP 6530074A JP 6530074 A JP6530074 A JP 6530074A JP S55901 B2 JPS55901 B2 JP S55901B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6530074A
Other languages
Japanese (ja)
Other versions
JPS50157064A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6530074A priority Critical patent/JPS55901B2/ja
Priority to GB21146/75A priority patent/GB1515571A/en
Priority to CA227,555A priority patent/CA1011885A/en
Priority to FR7516116A priority patent/FR2272488B1/fr
Priority to DE2522921A priority patent/DE2522921C3/de
Publication of JPS50157064A publication Critical patent/JPS50157064A/ja
Publication of JPS55901B2 publication Critical patent/JPS55901B2/ja
Expired legal-status Critical Current

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  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP6530074A 1974-05-23 1974-06-07 Expired JPS55901B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP6530074A JPS55901B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-06-07 1974-06-07
GB21146/75A GB1515571A (en) 1974-05-23 1975-05-19 Methods of growing thin epitaxial films on a crystal substrate
CA227,555A CA1011885A (en) 1974-05-23 1975-05-22 Molecular beam epitaxy method
FR7516116A FR2272488B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-05-23 1975-05-23
DE2522921A DE2522921C3 (de) 1974-05-23 1975-05-23 Verfahren zur epitaktischen Abscheidung dotierter III-V-Verbindungshalbleiter-Schichten

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6530074A JPS55901B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-06-07 1974-06-07

Publications (2)

Publication Number Publication Date
JPS50157064A JPS50157064A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-12-18
JPS55901B2 true JPS55901B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-01-10

Family

ID=13282916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6530074A Expired JPS55901B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-05-23 1974-06-07

Country Status (1)

Country Link
JP (1) JPS55901B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372A (en) * 1976-06-24 1978-01-05 Agency Of Ind Science & Technol Selective doping crystal growing method
JP3772272B2 (ja) 2004-02-13 2006-05-10 独立行政法人科学技術振興機構 I−vii族半導体単結晶薄膜およびその製造方法

Also Published As

Publication number Publication date
JPS50157064A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-12-18

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