JPS55901B2 - - Google Patents

Info

Publication number
JPS55901B2
JPS55901B2 JP6530074A JP6530074A JPS55901B2 JP S55901 B2 JPS55901 B2 JP S55901B2 JP 6530074 A JP6530074 A JP 6530074A JP 6530074 A JP6530074 A JP 6530074A JP S55901 B2 JPS55901 B2 JP S55901B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6530074A
Other versions
JPS50157064A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6530074A priority Critical patent/JPS55901B2/ja
Priority to GB21146/75A priority patent/GB1515571A/en
Priority to CA227,555A priority patent/CA1011885A/en
Priority to FR7516116A priority patent/FR2272488B1/fr
Priority to DE2522921A priority patent/DE2522921C3/de
Publication of JPS50157064A publication Critical patent/JPS50157064A/ja
Publication of JPS55901B2 publication Critical patent/JPS55901B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
JP6530074A 1974-05-23 1974-06-07 Expired JPS55901B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP6530074A JPS55901B2 (ja) 1974-06-07 1974-06-07
GB21146/75A GB1515571A (en) 1974-05-23 1975-05-19 Methods of growing thin epitaxial films on a crystal substrate
CA227,555A CA1011885A (en) 1974-05-23 1975-05-22 Molecular beam epitaxy method
FR7516116A FR2272488B1 (ja) 1974-05-23 1975-05-23
DE2522921A DE2522921C3 (de) 1974-05-23 1975-05-23 Verfahren zur epitaktischen Abscheidung dotierter III-V-Verbindungshalbleiter-Schichten

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6530074A JPS55901B2 (ja) 1974-06-07 1974-06-07

Publications (2)

Publication Number Publication Date
JPS50157064A JPS50157064A (ja) 1975-12-18
JPS55901B2 true JPS55901B2 (ja) 1980-01-10

Family

ID=13282916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6530074A Expired JPS55901B2 (ja) 1974-05-23 1974-06-07

Country Status (1)

Country Link
JP (1) JPS55901B2 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372A (en) * 1976-06-24 1978-01-05 Agency Of Ind Science & Technol Selective doping crystal growing method
JP3772272B2 (ja) 2004-02-13 2006-05-10 独立行政法人科学技術振興機構 I−vii族半導体単結晶薄膜およびその製造方法

Also Published As

Publication number Publication date
JPS50157064A (ja) 1975-12-18

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