JPS5579869A - Vacuum deposition apparatus - Google Patents

Vacuum deposition apparatus

Info

Publication number
JPS5579869A
JPS5579869A JP15151278A JP15151278A JPS5579869A JP S5579869 A JPS5579869 A JP S5579869A JP 15151278 A JP15151278 A JP 15151278A JP 15151278 A JP15151278 A JP 15151278A JP S5579869 A JPS5579869 A JP S5579869A
Authority
JP
Japan
Prior art keywords
substrate
source
film
board
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15151278A
Other languages
Japanese (ja)
Other versions
JPS5940226B2 (en
Inventor
Kenzo Ochi
Osamu Yamazaki
Kiyotaka Wasa
Shigeru Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15151278A priority Critical patent/JPS5940226B2/en
Publication of JPS5579869A publication Critical patent/JPS5579869A/en
Publication of JPS5940226B2 publication Critical patent/JPS5940226B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To form a precise thin film having a uniform thickness on substrate, by carrying out relative motion of sheltering body partially covering the substrate and the substrate in rectangular direction against the same thickness film line on the substrate. CONSTITUTION:Main part of sputtering evaporation apparatus etc. is composed of the disk-shaped evaporation source 11, the substrate board 12 facing to the source 11 and the circular arc-shaped thin plate sheltering body 14 provided between the source 11 and the board 12. The substrate 13 is attached on the board 12 and the body 14 is moved reciprocatively in the diameter direction d of the source 11 and also, circumference of the central axis O is moved in the circuit direction. By the above mechanism, uniform thickness evaporation film is obtained extending from the center of the substrate 13 to the end of the substrate. By the above principle, film thickness deviation is able to improve by reciprocating the body 14 in two sides direction by different velocity even when square or rectanglar evaporation source is used.
JP15151278A 1978-12-06 1978-12-06 Vapor deposition equipment Expired JPS5940226B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15151278A JPS5940226B2 (en) 1978-12-06 1978-12-06 Vapor deposition equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15151278A JPS5940226B2 (en) 1978-12-06 1978-12-06 Vapor deposition equipment

Publications (2)

Publication Number Publication Date
JPS5579869A true JPS5579869A (en) 1980-06-16
JPS5940226B2 JPS5940226B2 (en) 1984-09-28

Family

ID=15520123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15151278A Expired JPS5940226B2 (en) 1978-12-06 1978-12-06 Vapor deposition equipment

Country Status (1)

Country Link
JP (1) JPS5940226B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2517331A1 (en) * 1981-11-27 1983-06-03 Varian Associates METHOD AND DEVICE FOR DEFINING A DISSYMMETRIC THICKNESS PROFILE FOR SPRAYED LAYERS ON A SEMICONDUCTOR SUBSTRATE
CN113046700A (en) * 2019-12-26 2021-06-29 山东华光光电子股份有限公司 Semi-shielding device for end face coating of strip-shaped semiconductor laser and coating method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2517331A1 (en) * 1981-11-27 1983-06-03 Varian Associates METHOD AND DEVICE FOR DEFINING A DISSYMMETRIC THICKNESS PROFILE FOR SPRAYED LAYERS ON A SEMICONDUCTOR SUBSTRATE
CN113046700A (en) * 2019-12-26 2021-06-29 山东华光光电子股份有限公司 Semi-shielding device for end face coating of strip-shaped semiconductor laser and coating method

Also Published As

Publication number Publication date
JPS5940226B2 (en) 1984-09-28

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