JPS557519A - Continuously growing method for single crystal - Google Patents

Continuously growing method for single crystal

Info

Publication number
JPS557519A
JPS557519A JP7780578A JP7780578A JPS557519A JP S557519 A JPS557519 A JP S557519A JP 7780578 A JP7780578 A JP 7780578A JP 7780578 A JP7780578 A JP 7780578A JP S557519 A JPS557519 A JP S557519A
Authority
JP
Japan
Prior art keywords
melt
single crystal
wire
crystal
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7780578A
Other languages
Japanese (ja)
Inventor
Ritsuo Hasumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP7780578A priority Critical patent/JPS557519A/en
Publication of JPS557519A publication Critical patent/JPS557519A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To grow a single crystal thin wire or a sufficiently broad single crystal sheet by passing one or more insulator thin wires through the inside or surface of a crystal growing melt to leave the melt on the surfaces of the insulator wires in the form of films by means of surface tension.
CONSTITUTION: Part of crystal material rod 1 is melted with heater 2 to form melt 3, and insulator thin wire 4 is continuously passed through melt 3. Thus, a little melt 3 is left on the surface of wire 4 and slowly cooled to give single crystal thin wire 5. Since wire 4 is fiber obtd. by drawing quartz glass or saphire, wire 4 of about 1 km can be made, and drawing and crystal growth are continuously carried out. The material grown by this method is tougher than a pure single crystal, has high bending strength, and is about equal to the crystal in electrical and magnetic properties.
COPYRIGHT: (C)1980,JPO&Japio
JP7780578A 1978-06-27 1978-06-27 Continuously growing method for single crystal Pending JPS557519A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7780578A JPS557519A (en) 1978-06-27 1978-06-27 Continuously growing method for single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7780578A JPS557519A (en) 1978-06-27 1978-06-27 Continuously growing method for single crystal

Publications (1)

Publication Number Publication Date
JPS557519A true JPS557519A (en) 1980-01-19

Family

ID=13644218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7780578A Pending JPS557519A (en) 1978-06-27 1978-06-27 Continuously growing method for single crystal

Country Status (1)

Country Link
JP (1) JPS557519A (en)

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