JPS5569069A - Testing method for dampproof property of semiconductor device - Google Patents

Testing method for dampproof property of semiconductor device

Info

Publication number
JPS5569069A
JPS5569069A JP14445478A JP14445478A JPS5569069A JP S5569069 A JPS5569069 A JP S5569069A JP 14445478 A JP14445478 A JP 14445478A JP 14445478 A JP14445478 A JP 14445478A JP S5569069 A JPS5569069 A JP S5569069A
Authority
JP
Japan
Prior art keywords
semiconductor device
temperature
saturated
reverse bias
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14445478A
Other languages
Japanese (ja)
Inventor
Kiyoshi Iwamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14445478A priority Critical patent/JPS5569069A/en
Publication of JPS5569069A publication Critical patent/JPS5569069A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To appreciate a semiconductor device in a short time and also to prevent the external lead of the device from corroding by applying a reverse bias at a high temperature after preserving the semiconductor device in a high-temperature, high-pressure and saturated-vapor atmosphere.
CONSTITUTION: Sample 2 of a semiconductor device is preserved in case 5, kept in a high-temperature, high-pressure and saturated-vapor state, of high-pressure container 1a, and internal elements are dampened as rapidly as possible. Then, sample 2 is put in high-temperature furnace 6 and applied with a reverse bias from terminal 7 to facilitate reaction between damp and elements for a test of resistance to damp. As a result, since reaction is accelerated, appreciation is done in a short time and no reverse bias is applied in saturated vapor, so that the external lead of the semiconductor device can be prevented from corroding.
COPYRIGHT: (C)1980,JPO&Japio
JP14445478A 1978-11-20 1978-11-20 Testing method for dampproof property of semiconductor device Pending JPS5569069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14445478A JPS5569069A (en) 1978-11-20 1978-11-20 Testing method for dampproof property of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14445478A JPS5569069A (en) 1978-11-20 1978-11-20 Testing method for dampproof property of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5569069A true JPS5569069A (en) 1980-05-24

Family

ID=15362615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14445478A Pending JPS5569069A (en) 1978-11-20 1978-11-20 Testing method for dampproof property of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5569069A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879139A (en) * 1981-11-06 1983-05-12 Hitachi Ltd Testing method for damp-proof property of semiconductor device
JPS59112269A (en) * 1982-11-25 1984-06-28 Matsushita Electric Ind Co Ltd Testing method of semiconductor device
JPS59182400A (en) * 1983-02-11 1984-10-17 ザ タウ ケミカル カンパニ− Cesium removing method, purification of coolant in boiling and pressing water , and mixed ion exchang rasin
JPS59191642U (en) * 1983-06-06 1984-12-19 株式会社 千代田製作所 Environmental tester
US7120073B2 (en) * 2002-08-29 2006-10-10 Micron Technology, Inc. Integrated circuit devices having reducing variable retention characteristics
CN108169654A (en) * 2018-01-02 2018-06-15 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) Power module HTRB reliability test systems

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879139A (en) * 1981-11-06 1983-05-12 Hitachi Ltd Testing method for damp-proof property of semiconductor device
JPH0249456B2 (en) * 1981-11-06 1990-10-30 Hitachi Ltd
JPS59112269A (en) * 1982-11-25 1984-06-28 Matsushita Electric Ind Co Ltd Testing method of semiconductor device
JPS59182400A (en) * 1983-02-11 1984-10-17 ザ タウ ケミカル カンパニ− Cesium removing method, purification of coolant in boiling and pressing water , and mixed ion exchang rasin
JPS59191642U (en) * 1983-06-06 1984-12-19 株式会社 千代田製作所 Environmental tester
JPH0320763Y2 (en) * 1983-06-06 1991-05-07
US7120073B2 (en) * 2002-08-29 2006-10-10 Micron Technology, Inc. Integrated circuit devices having reducing variable retention characteristics
CN108169654A (en) * 2018-01-02 2018-06-15 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) Power module HTRB reliability test systems

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