JPS556846A - Electric charge transfer type semiconductor device - Google Patents

Electric charge transfer type semiconductor device

Info

Publication number
JPS556846A
JPS556846A JP7899878A JP7899878A JPS556846A JP S556846 A JPS556846 A JP S556846A JP 7899878 A JP7899878 A JP 7899878A JP 7899878 A JP7899878 A JP 7899878A JP S556846 A JPS556846 A JP S556846A
Authority
JP
Japan
Prior art keywords
input
cell
standby
picked
gates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7899878A
Other languages
Japanese (ja)
Other versions
JPS6213825B2 (en
Inventor
Kazuyasu Fujishima
Michihiro Yamada
Tetsuo Tada
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7899878A priority Critical patent/JPS556846A/en
Publication of JPS556846A publication Critical patent/JPS556846A/en
Publication of JPS6213825B2 publication Critical patent/JPS6213825B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To increase the number of memory cells able to be integrated per unit area by means of a standby cell provided for temporary retention of a signal charge picked up corresponding to a signal applied to an input terminal. CONSTITUTION:A plurality of standby cells with DC voltage applied thereto are provided following input gates 11a to 11d adapted to be driven by an input clock. Signals gradually transmitted are picked up in sequence through input gates 11a to 11d. When an input data is picked up with a standby cell 12 corresponding to the entire channel, a separation gate 13 provided following the standby cell is opened and a signal charge retained by the standby cell 12 is distributed to an input cell provided following the gate 13. With the gate 13 closed, the charge is replaced to any fine signal charge determined by the area ratio between the gates of the sandby cell and the input cells 14 and is transfered to a memory cell section.
JP7899878A 1978-06-28 1978-06-28 Electric charge transfer type semiconductor device Granted JPS556846A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7899878A JPS556846A (en) 1978-06-28 1978-06-28 Electric charge transfer type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7899878A JPS556846A (en) 1978-06-28 1978-06-28 Electric charge transfer type semiconductor device

Publications (2)

Publication Number Publication Date
JPS556846A true JPS556846A (en) 1980-01-18
JPS6213825B2 JPS6213825B2 (en) 1987-03-28

Family

ID=13677553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7899878A Granted JPS556846A (en) 1978-06-28 1978-06-28 Electric charge transfer type semiconductor device

Country Status (1)

Country Link
JP (1) JPS556846A (en)

Also Published As

Publication number Publication date
JPS6213825B2 (en) 1987-03-28

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