JPS5563845A - Beam lead semiconductor device - Google Patents

Beam lead semiconductor device

Info

Publication number
JPS5563845A
JPS5563845A JP13727878A JP13727878A JPS5563845A JP S5563845 A JPS5563845 A JP S5563845A JP 13727878 A JP13727878 A JP 13727878A JP 13727878 A JP13727878 A JP 13727878A JP S5563845 A JPS5563845 A JP S5563845A
Authority
JP
Japan
Prior art keywords
wiring
beam lead
electrode
insulating film
lead electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13727878A
Other languages
Japanese (ja)
Inventor
Akira Saito
Nobuhiro Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP13727878A priority Critical patent/JPS5563845A/en
Publication of JPS5563845A publication Critical patent/JPS5563845A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain a good yield rate and large integration by providing a radiating electrode made of the same metal as that of a beam lead electrode on an insulating film to improve heat radiation.
CONSTITUTION: After connecting a wiring 22 to a semiconductor circuit 20A formed on a semiconductor substrate 20, an insulating film 23 is provided on the entire surface of the wiring 22 and a thermo-oxide film 21. An intermediate metal 24 is deposited thereon as a first layer of Ti and a second layer of Pt is formed selectively. The intermediate metal is heavily plated with gold to provide a current path, and then a beam lead electrode 25 and a rediating electrode 26 are formed simultaneously. Finally, unnecessary Ti is removed. Since the insulating film 23 is formed so that the wiring 22 with in the chip and the beam lead electrode 25 can be constructed separately, the integration of the wiring 22 can be proceeded by utilizing the workability of Al. In addition, the radiating electrode 26 is additionally formed, so that the surface temperature of a semiconductor device can be lowered on an average, and the yield can be greatly improved.
COPYRIGHT: (C)1980,JPO&Japio
JP13727878A 1978-11-09 1978-11-09 Beam lead semiconductor device Pending JPS5563845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13727878A JPS5563845A (en) 1978-11-09 1978-11-09 Beam lead semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13727878A JPS5563845A (en) 1978-11-09 1978-11-09 Beam lead semiconductor device

Publications (1)

Publication Number Publication Date
JPS5563845A true JPS5563845A (en) 1980-05-14

Family

ID=15194929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13727878A Pending JPS5563845A (en) 1978-11-09 1978-11-09 Beam lead semiconductor device

Country Status (1)

Country Link
JP (1) JPS5563845A (en)

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