JPS5562761A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5562761A
JPS5562761A JP13475878A JP13475878A JPS5562761A JP S5562761 A JPS5562761 A JP S5562761A JP 13475878 A JP13475878 A JP 13475878A JP 13475878 A JP13475878 A JP 13475878A JP S5562761 A JPS5562761 A JP S5562761A
Authority
JP
Japan
Prior art keywords
layer
transistor
emitter
base
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13475878A
Other languages
Japanese (ja)
Inventor
Kimimaro Yoshikawa
Ichiuemon Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13475878A priority Critical patent/JPS5562761A/en
Publication of JPS5562761A publication Critical patent/JPS5562761A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To improve the characteristics of a semiconductor integrated circuit device by separately forming the emitter first inpurity layer for an imverter transistor and the collector second impurity layer for a bipolar transistor, approaching the first layer to a base layer and separating the second layer from the base layer. CONSTITUTION:An N<+>-type layer 8 is provided on a P-type semiconductor substrate 6, an N<+>-type layer 7 is formed stepwisely on an eoitaxial layer 10 to thereby form an epitaxial layer 11. The layer 7 is so formed as not to reach the base layer 4 of a bipolar transistor. Then, according to the conventional process, the emitter 1 of an injector transistor, the common base of an inverter transistor, collectors 3 thereof, and base 4 and emitter 4' of a bipolar transistor are formed, and channel stopper 12 and isolating layers 13, 14 are formed as required. According to this configuration, it can improve the emitter implanting efficiency of the inverter transistor of I<2>L and thereby improve the dielectric strength of the coexistent bipolar transistor.
JP13475878A 1978-11-01 1978-11-01 Semiconductor integrated circuit device Pending JPS5562761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13475878A JPS5562761A (en) 1978-11-01 1978-11-01 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13475878A JPS5562761A (en) 1978-11-01 1978-11-01 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5562761A true JPS5562761A (en) 1980-05-12

Family

ID=15135863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13475878A Pending JPS5562761A (en) 1978-11-01 1978-11-01 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5562761A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161786A (en) * 1974-11-27 1976-05-28 Hitachi Ltd
JPS5263080A (en) * 1975-11-18 1977-05-25 Matsushita Electric Ind Co Ltd Production of semiconductor integrated circuit device
JPS52154383A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Semiconductor integrated circuit device
JPS533781A (en) * 1976-06-30 1978-01-13 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS5354983A (en) * 1976-10-28 1978-05-18 Nec Corp Semiconductor ingegrated circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161786A (en) * 1974-11-27 1976-05-28 Hitachi Ltd
JPS5263080A (en) * 1975-11-18 1977-05-25 Matsushita Electric Ind Co Ltd Production of semiconductor integrated circuit device
JPS52154383A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Semiconductor integrated circuit device
JPS533781A (en) * 1976-06-30 1978-01-13 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS5354983A (en) * 1976-10-28 1978-05-18 Nec Corp Semiconductor ingegrated circuit

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