JPS5562331A - Absolute pressure reference type pressure sensor - Google Patents

Absolute pressure reference type pressure sensor

Info

Publication number
JPS5562331A
JPS5562331A JP13580878A JP13580878A JPS5562331A JP S5562331 A JPS5562331 A JP S5562331A JP 13580878 A JP13580878 A JP 13580878A JP 13580878 A JP13580878 A JP 13580878A JP S5562331 A JPS5562331 A JP S5562331A
Authority
JP
Japan
Prior art keywords
pressure
detected
diaphragm
electrodes
room
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13580878A
Other languages
Japanese (ja)
Inventor
Norio Ichikawa
Kiyomitsu Suzuki
Motohisa Nishihara
Satoshi Shimada
Hiroji Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13580878A priority Critical patent/JPS5562331A/en
Publication of JPS5562331A publication Critical patent/JPS5562331A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To secure the measurement of the voltage to be detected with the absolute pressure by detecting the differential voltage between two units of the diaphragm using the semiconductor distortion gauge, one of which is made vacuum with the other detected to the atmosphere of the detected pressure.
CONSTITUTION: Pellet 1 is joined onto the flat surface of Pyrex glass 2 via the anode junction method, and then diaphragm rooms 13a and 13b with semiconductor distortion gauges 11a and 11b formed on each upper surface are formed. And room 13a is kept under the vacuum state; while room 13b is connected to measured pressure Pi via hole 16 and pipe 4. On the other hand, gauges 11a and 11b are connected to electrodes 8a and 8b via resistance draw-around parts 12a and 12b, and electrodes 8a and 8b are connected to thick-film conductors 9a and 9b via lead wires 10a and 10b. And conductors 9a and 9b are connected to terminals 3a and 3b. The upper parts of these joint areas are covered with cap 15 containing hole 18 to introduce atmospheric pressure Ph to form a pressure sensor.
COPYRIGHT: (C)1980,JPO&Japio
JP13580878A 1978-11-06 1978-11-06 Absolute pressure reference type pressure sensor Pending JPS5562331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13580878A JPS5562331A (en) 1978-11-06 1978-11-06 Absolute pressure reference type pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13580878A JPS5562331A (en) 1978-11-06 1978-11-06 Absolute pressure reference type pressure sensor

Publications (1)

Publication Number Publication Date
JPS5562331A true JPS5562331A (en) 1980-05-10

Family

ID=15160297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13580878A Pending JPS5562331A (en) 1978-11-06 1978-11-06 Absolute pressure reference type pressure sensor

Country Status (1)

Country Link
JP (1) JPS5562331A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4511878A (en) * 1982-09-20 1985-04-16 Hitachi, Ltd. Pressure sensor with improved semiconductor diaphragm
JPS6156465A (en) * 1984-08-28 1986-03-22 Toshiba Corp Semiconductor pressure converter
JPH0247535U (en) * 1988-09-27 1990-03-30
JPH02201510A (en) * 1989-01-30 1990-08-09 Kiyohara Masako High precision regulator
JPH0465643A (en) * 1990-07-05 1992-03-02 Mitsubishi Electric Corp Semiconductor pressure sensor and its manufacture
JPH0476956A (en) * 1990-07-19 1992-03-11 Mitsubishi Electric Corp Manufacture of semiconductor acceleration sensor
JPH0476959A (en) * 1990-07-19 1992-03-11 Mitsubishi Electric Corp Manufacture of semiconductor pressure sensor
JPH04113239A (en) * 1990-09-03 1992-04-14 Hitachi Ltd Composite function type sensor
JPH0469721U (en) * 1990-10-24 1992-06-19
JPH09494U (en) * 1986-03-10 1997-09-19 マレリ・オートロニカ・ソシエタ・ペル・アチオニ Thick film sensor
JP2007003383A (en) * 2005-06-24 2007-01-11 Denso Corp Pressure sensor

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4511878A (en) * 1982-09-20 1985-04-16 Hitachi, Ltd. Pressure sensor with improved semiconductor diaphragm
JPS6156465A (en) * 1984-08-28 1986-03-22 Toshiba Corp Semiconductor pressure converter
JPH09494U (en) * 1986-03-10 1997-09-19 マレリ・オートロニカ・ソシエタ・ペル・アチオニ Thick film sensor
JPH0247535U (en) * 1988-09-27 1990-03-30
JPH02201510A (en) * 1989-01-30 1990-08-09 Kiyohara Masako High precision regulator
JPH0465643A (en) * 1990-07-05 1992-03-02 Mitsubishi Electric Corp Semiconductor pressure sensor and its manufacture
JPH0476956A (en) * 1990-07-19 1992-03-11 Mitsubishi Electric Corp Manufacture of semiconductor acceleration sensor
JPH0476959A (en) * 1990-07-19 1992-03-11 Mitsubishi Electric Corp Manufacture of semiconductor pressure sensor
JPH04113239A (en) * 1990-09-03 1992-04-14 Hitachi Ltd Composite function type sensor
JPH0469721U (en) * 1990-10-24 1992-06-19
JP2007003383A (en) * 2005-06-24 2007-01-11 Denso Corp Pressure sensor
JP4556782B2 (en) * 2005-06-24 2010-10-06 株式会社デンソー Pressure sensor

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