JPS5561064A - Schottky barrier diode built-in transistor - Google Patents

Schottky barrier diode built-in transistor

Info

Publication number
JPS5561064A
JPS5561064A JP13389578A JP13389578A JPS5561064A JP S5561064 A JPS5561064 A JP S5561064A JP 13389578 A JP13389578 A JP 13389578A JP 13389578 A JP13389578 A JP 13389578A JP S5561064 A JPS5561064 A JP S5561064A
Authority
JP
Japan
Prior art keywords
electrode
base
layer
schottky barrier
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13389578A
Other languages
Japanese (ja)
Inventor
Toshio Shigekane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP13389578A priority Critical patent/JPS5561064A/en
Publication of JPS5561064A publication Critical patent/JPS5561064A/en
Pending legal-status Critical Current

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Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To check surplus base current by making an electrode for forming a Schottky barrier on the surface of a transistor low impurities density layer and connecting said electrode with a base or a collector.
CONSTITUTION: On an n-type semiconductor base plate 1, a p+ base layer 2 is made and in the layer 2 an n+ emitter layer 3 is made. On the surface of the base plate proper collector region 1, Mo or Pt electrode 4 is provided to make a Schottky barrier and this is connected with a base electrode through an insulating film. Further in order to prevent the resistance of collector region, then the cathode side of the barrier is connected with collector electrode through the layer 6 and the base plate end elevation. Said elevation is low resisting on account of many recombination centers due to the cutting time strain and absorption impurities and moreover far lower resisting than the collector region inside the semiconductor. With said constitution the Schottky barrier diode built-in transistor, which checks surplus base current, can be prepared.
COPYRIGHT: (C)1980,JPO&Japio
JP13389578A 1978-10-31 1978-10-31 Schottky barrier diode built-in transistor Pending JPS5561064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13389578A JPS5561064A (en) 1978-10-31 1978-10-31 Schottky barrier diode built-in transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13389578A JPS5561064A (en) 1978-10-31 1978-10-31 Schottky barrier diode built-in transistor

Publications (1)

Publication Number Publication Date
JPS5561064A true JPS5561064A (en) 1980-05-08

Family

ID=15115608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13389578A Pending JPS5561064A (en) 1978-10-31 1978-10-31 Schottky barrier diode built-in transistor

Country Status (1)

Country Link
JP (1) JPS5561064A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7332750B1 (en) * 2000-09-01 2008-02-19 Fairchild Semiconductor Corporation Power semiconductor device with improved unclamped inductive switching capability and process for forming same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7332750B1 (en) * 2000-09-01 2008-02-19 Fairchild Semiconductor Corporation Power semiconductor device with improved unclamped inductive switching capability and process for forming same

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