JPS5561064A - Schottky barrier diode built-in transistor - Google Patents
Schottky barrier diode built-in transistorInfo
- Publication number
- JPS5561064A JPS5561064A JP13389578A JP13389578A JPS5561064A JP S5561064 A JPS5561064 A JP S5561064A JP 13389578 A JP13389578 A JP 13389578A JP 13389578 A JP13389578 A JP 13389578A JP S5561064 A JPS5561064 A JP S5561064A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- base
- layer
- schottky barrier
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To check surplus base current by making an electrode for forming a Schottky barrier on the surface of a transistor low impurities density layer and connecting said electrode with a base or a collector.
CONSTITUTION: On an n-type semiconductor base plate 1, a p+ base layer 2 is made and in the layer 2 an n+ emitter layer 3 is made. On the surface of the base plate proper collector region 1, Mo or Pt electrode 4 is provided to make a Schottky barrier and this is connected with a base electrode through an insulating film. Further in order to prevent the resistance of collector region, then the cathode side of the barrier is connected with collector electrode through the layer 6 and the base plate end elevation. Said elevation is low resisting on account of many recombination centers due to the cutting time strain and absorption impurities and moreover far lower resisting than the collector region inside the semiconductor. With said constitution the Schottky barrier diode built-in transistor, which checks surplus base current, can be prepared.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13389578A JPS5561064A (en) | 1978-10-31 | 1978-10-31 | Schottky barrier diode built-in transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13389578A JPS5561064A (en) | 1978-10-31 | 1978-10-31 | Schottky barrier diode built-in transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5561064A true JPS5561064A (en) | 1980-05-08 |
Family
ID=15115608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13389578A Pending JPS5561064A (en) | 1978-10-31 | 1978-10-31 | Schottky barrier diode built-in transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5561064A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7332750B1 (en) * | 2000-09-01 | 2008-02-19 | Fairchild Semiconductor Corporation | Power semiconductor device with improved unclamped inductive switching capability and process for forming same |
-
1978
- 1978-10-31 JP JP13389578A patent/JPS5561064A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7332750B1 (en) * | 2000-09-01 | 2008-02-19 | Fairchild Semiconductor Corporation | Power semiconductor device with improved unclamped inductive switching capability and process for forming same |
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