JPS5548966A - Power transistor - Google Patents

Power transistor

Info

Publication number
JPS5548966A
JPS5548966A JP12220678A JP12220678A JPS5548966A JP S5548966 A JPS5548966 A JP S5548966A JP 12220678 A JP12220678 A JP 12220678A JP 12220678 A JP12220678 A JP 12220678A JP S5548966 A JPS5548966 A JP S5548966A
Authority
JP
Japan
Prior art keywords
emitter
base
region
sheet resistance
diffusion sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12220678A
Other languages
Japanese (ja)
Inventor
Kunihiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12220678A priority Critical patent/JPS5548966A/en
Publication of JPS5548966A publication Critical patent/JPS5548966A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To improve breakage resisting capability by specifying the values for an emitter diffusion sheet resistance, a ratio between an emitter contact width and a distance from an emitter base joint to an emitter contact and base diffusion sheet resistance, etc.
CONSTITUTION: A P-type base region 2 is diffusion-formed on an N-type Si base board 1, and by providing its inside with an N-type emitter region 3, an entire surface is covered with an SiO2 firm 4. And then, the film 4 is provided with an emitter contact hole 5 and a base contact hole 6, an emitter electrode 7 and a base electrode 8 are pulled out through these respective holes and a collector electrode 9 is attached onto rear side of the base board 1 to prepare a planer type transistor. In this mechanism, the diffusion sheet resistance of the region 2 is prescribed to approximately 7Ω/square, a ratio between an emitter contact width WEC and a distance W from the emitter base joint 10 to the emitter contact is to less than 1/2, a diffusion sheet resistance of the region 2 is to more than 150Ω/square, and further, distances from the joint 10 to respective contacts are to more than 40μm each.
COPYRIGHT: (C)1980,JPO&Japio
JP12220678A 1978-10-03 1978-10-03 Power transistor Pending JPS5548966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12220678A JPS5548966A (en) 1978-10-03 1978-10-03 Power transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12220678A JPS5548966A (en) 1978-10-03 1978-10-03 Power transistor

Publications (1)

Publication Number Publication Date
JPS5548966A true JPS5548966A (en) 1980-04-08

Family

ID=14830169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12220678A Pending JPS5548966A (en) 1978-10-03 1978-10-03 Power transistor

Country Status (1)

Country Link
JP (1) JPS5548966A (en)

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