JPS5548966A - Power transistor - Google Patents
Power transistorInfo
- Publication number
- JPS5548966A JPS5548966A JP12220678A JP12220678A JPS5548966A JP S5548966 A JPS5548966 A JP S5548966A JP 12220678 A JP12220678 A JP 12220678A JP 12220678 A JP12220678 A JP 12220678A JP S5548966 A JPS5548966 A JP S5548966A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- base
- region
- sheet resistance
- diffusion sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To improve breakage resisting capability by specifying the values for an emitter diffusion sheet resistance, a ratio between an emitter contact width and a distance from an emitter base joint to an emitter contact and base diffusion sheet resistance, etc.
CONSTITUTION: A P-type base region 2 is diffusion-formed on an N-type Si base board 1, and by providing its inside with an N-type emitter region 3, an entire surface is covered with an SiO2 firm 4. And then, the film 4 is provided with an emitter contact hole 5 and a base contact hole 6, an emitter electrode 7 and a base electrode 8 are pulled out through these respective holes and a collector electrode 9 is attached onto rear side of the base board 1 to prepare a planer type transistor. In this mechanism, the diffusion sheet resistance of the region 2 is prescribed to approximately 7Ω/square, a ratio between an emitter contact width WEC and a distance W from the emitter base joint 10 to the emitter contact is to less than 1/2, a diffusion sheet resistance of the region 2 is to more than 150Ω/square, and further, distances from the joint 10 to respective contacts are to more than 40μm each.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12220678A JPS5548966A (en) | 1978-10-03 | 1978-10-03 | Power transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12220678A JPS5548966A (en) | 1978-10-03 | 1978-10-03 | Power transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5548966A true JPS5548966A (en) | 1980-04-08 |
Family
ID=14830169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12220678A Pending JPS5548966A (en) | 1978-10-03 | 1978-10-03 | Power transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5548966A (en) |
-
1978
- 1978-10-03 JP JP12220678A patent/JPS5548966A/en active Pending
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