JPS5536904A - Photoelectric potentiometer - Google Patents

Photoelectric potentiometer

Info

Publication number
JPS5536904A
JPS5536904A JP10753678A JP10753678A JPS5536904A JP S5536904 A JPS5536904 A JP S5536904A JP 10753678 A JP10753678 A JP 10753678A JP 10753678 A JP10753678 A JP 10753678A JP S5536904 A JPS5536904 A JP S5536904A
Authority
JP
Japan
Prior art keywords
semiconductor layer
type semiconductor
junction
group
along
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10753678A
Other languages
Japanese (ja)
Inventor
Masuji Sato
Takao Furuumi
Satoru Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10753678A priority Critical patent/JPS5536904A/en
Publication of JPS5536904A publication Critical patent/JPS5536904A/en
Pending legal-status Critical Current

Links

Landscapes

  • Adjustable Resistors (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE: To accelerate response time and also to improve thermal stability and durability by using photodiodes in layer connected in series to opposite polarity each other.
CONSTITUTION: A semiconductor layer 12 consists of P type semiconductor in Si group; N type semiconductor layer 13 consists of N type semiconductor in Si group which comes in PN junction with the semiconductor 12 along the semiconductor layer 12; P type semiconductor layer 14 consists of P type semiconductor in Si group which comes in PN junction with the semiconductor layer 13 along the semiconductor layer 13. Now, an output electrode 15 is provided along and also in contact with the semiconductor layer 14, light is radiated to a position selected on the PN junction through a radiating mechanism 16, and a potential on the semiconductor layer 12 corresponding to the position radiated as above is introduced to the output electrode 15. A response time can be accelerated eminently thereby and a thermal stability, durability, etc. can also be improved.
COPYRIGHT: (C)1980,JPO&Japio
JP10753678A 1978-09-04 1978-09-04 Photoelectric potentiometer Pending JPS5536904A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10753678A JPS5536904A (en) 1978-09-04 1978-09-04 Photoelectric potentiometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10753678A JPS5536904A (en) 1978-09-04 1978-09-04 Photoelectric potentiometer

Publications (1)

Publication Number Publication Date
JPS5536904A true JPS5536904A (en) 1980-03-14

Family

ID=14461669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10753678A Pending JPS5536904A (en) 1978-09-04 1978-09-04 Photoelectric potentiometer

Country Status (1)

Country Link
JP (1) JPS5536904A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01159577A (en) * 1987-12-16 1989-06-22 Takahashi Kogyo Kk Two-stage freezer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01159577A (en) * 1987-12-16 1989-06-22 Takahashi Kogyo Kk Two-stage freezer

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