JPS5558563A - Integrated circuit chip assembling signal source and semiconductor strucutre used therefor - Google Patents

Integrated circuit chip assembling signal source and semiconductor strucutre used therefor

Info

Publication number
JPS5558563A
JPS5558563A JP10395679A JP10395679A JPS5558563A JP S5558563 A JPS5558563 A JP S5558563A JP 10395679 A JP10395679 A JP 10395679A JP 10395679 A JP10395679 A JP 10395679A JP S5558563 A JPS5558563 A JP S5558563A
Authority
JP
Japan
Prior art keywords
strucutre
semiconductor
integrated circuit
signal source
circuit chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10395679A
Other languages
English (en)
Japanese (ja)
Inventor
Jiei Kiyubineku Jieemusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi Semiconductor ULC
Original Assignee
Mitel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitel Corp filed Critical Mitel Corp
Publication of JPS5558563A publication Critical patent/JPS5558563A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP10395679A 1978-08-16 1979-08-15 Integrated circuit chip assembling signal source and semiconductor strucutre used therefor Pending JPS5558563A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/933,984 US4246502A (en) 1978-08-16 1978-08-16 Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom

Publications (1)

Publication Number Publication Date
JPS5558563A true JPS5558563A (en) 1980-05-01

Family

ID=25464753

Family Applications (2)

Application Number Title Priority Date Filing Date
JP10395679A Pending JPS5558563A (en) 1978-08-16 1979-08-15 Integrated circuit chip assembling signal source and semiconductor strucutre used therefor
JP1987175722U Pending JPS6397248U (US07534539-20090519-C00280.png) 1978-08-16 1987-11-16

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP1987175722U Pending JPS6397248U (US07534539-20090519-C00280.png) 1978-08-16 1987-11-16

Country Status (5)

Country Link
US (1) US4246502A (US07534539-20090519-C00280.png)
JP (2) JPS5558563A (US07534539-20090519-C00280.png)
CA (1) CA1123523A (US07534539-20090519-C00280.png)
DE (1) DE2929921A1 (US07534539-20090519-C00280.png)
GB (1) GB2028585B (US07534539-20090519-C00280.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186805A (en) * 1981-05-14 1982-11-17 Citizen Watch Co Ltd Integrated circuit for quartz oscillation
JPS59144165A (ja) * 1983-01-31 1984-08-18 インテル・コ−ポレ−シヨン 分圧器
JPS624146U (US07534539-20090519-C00280.png) * 1986-05-15 1987-01-12

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5811750B2 (ja) * 1979-06-04 1983-03-04 株式会社日立製作所 高耐圧抵抗素子
JPS58119670A (ja) * 1982-01-11 1983-07-16 Nissan Motor Co Ltd 半導体装置
US5686751A (en) * 1996-06-28 1997-11-11 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling
US5825079A (en) * 1997-01-23 1998-10-20 Luminous Intent, Inc. Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
US5716880A (en) * 1997-02-20 1998-02-10 Chartered Semiconductor Manufacturing Pte Ltd. Method for forming vertical polysilicon diode compatible with CMOS/BICMOS formation
US6271067B1 (en) 1998-02-27 2001-08-07 Micron Technology, Inc. Methods of forming field effect transistors and field effect transistor circuitry
EP0987763A1 (en) * 1998-09-15 2000-03-22 STMicroelectronics S.r.l. Diode connected transistor and related process of fabrication
US6420757B1 (en) 1999-09-14 2002-07-16 Vram Technologies, Llc Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
US6433370B1 (en) 2000-02-10 2002-08-13 Vram Technologies, Llc Method and apparatus for cylindrical semiconductor diodes
US6507063B2 (en) * 2000-04-17 2003-01-14 International Business Machines Corporation Poly-poly/MOS capacitor having a gate encapsulating first electrode layer
US7151036B1 (en) * 2002-07-29 2006-12-19 Vishay-Siliconix Precision high-frequency capacitor formed on semiconductor substrate
US6538300B1 (en) * 2000-09-14 2003-03-25 Vishay Intertechnology, Inc. Precision high-frequency capacitor formed on semiconductor substrate
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US6633063B2 (en) * 2001-05-04 2003-10-14 Semiconductor Components Industries Llc Low voltage transient voltage suppressor and method of making
US6537921B2 (en) 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
CA2461844C (en) 2001-09-27 2011-04-05 Pioneer Hi-Bred International, Inc. Phytate polynucleotides and methods of use
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
CA2634493C (en) * 2005-12-23 2015-05-19 Francois Gosselin Capacitor based transformer
US20110080760A1 (en) * 2009-10-02 2011-04-07 Chao-Cheng Lu Rectifier driving circuit

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644850A (en) * 1969-06-11 1972-02-22 Ibm Integrated circuit band pass filter
US3789246A (en) * 1972-02-14 1974-01-29 Rca Corp Insulated dual gate field-effect transistor signal translator having means for reducing its sensitivity to supply voltage variations
US4163242A (en) * 1972-11-13 1979-07-31 Siemens Aktiengesellschaft MOS storage integrated circuit using individual FET elements
US3836992A (en) * 1973-03-16 1974-09-17 Ibm Electrically erasable floating gate fet memory cell
US4028694A (en) * 1975-06-10 1977-06-07 International Business Machines Corporation A/D and D/A converter using C-2C ladder network
US3979734A (en) * 1975-06-16 1976-09-07 International Business Machines Corporation Multiple element charge storage memory cell
NL7609587A (nl) * 1975-09-08 1977-03-10 Ncr Co Elektrisch afstembare mnos-capaciteit.
JPS52144278A (en) * 1976-05-27 1977-12-01 Toshiba Corp Circuit for protecting input with respect to mos integrated circuit
FR2365858A1 (fr) * 1976-09-24 1978-04-21 Thomson Csf Memoire non volatile de longue duree pour signaux rapides
FR2365859A1 (fr) * 1976-09-24 1978-04-21 Thomson Csf Memoire non volatile pour signaux rapides
US4112509A (en) * 1976-12-27 1978-09-05 Texas Instruments Incorporated Electrically alterable floating gate semiconductor memory device
US4151021A (en) * 1977-01-26 1979-04-24 Texas Instruments Incorporated Method of making a high density floating gate electrically programmable ROM

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186805A (en) * 1981-05-14 1982-11-17 Citizen Watch Co Ltd Integrated circuit for quartz oscillation
JPS59144165A (ja) * 1983-01-31 1984-08-18 インテル・コ−ポレ−シヨン 分圧器
JPS624146U (US07534539-20090519-C00280.png) * 1986-05-15 1987-01-12

Also Published As

Publication number Publication date
DE2929921A1 (de) 1980-02-28
GB2028585A (en) 1980-03-05
US4246502A (en) 1981-01-20
CA1123523A (en) 1982-05-11
JPS6397248U (US07534539-20090519-C00280.png) 1988-06-23
GB2028585B (en) 1983-02-16

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