JPS5552275A - Junction field effect transistor - Google Patents
Junction field effect transistorInfo
- Publication number
- JPS5552275A JPS5552275A JP12558078A JP12558078A JPS5552275A JP S5552275 A JPS5552275 A JP S5552275A JP 12558078 A JP12558078 A JP 12558078A JP 12558078 A JP12558078 A JP 12558078A JP S5552275 A JPS5552275 A JP S5552275A
- Authority
- JP
- Japan
- Prior art keywords
- source
- drain
- wafer
- channel region
- high concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- -1 boron ions Chemical class 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12558078A JPS5552275A (en) | 1978-10-11 | 1978-10-11 | Junction field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12558078A JPS5552275A (en) | 1978-10-11 | 1978-10-11 | Junction field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5552275A true JPS5552275A (en) | 1980-04-16 |
| JPS6146990B2 JPS6146990B2 (enrdf_load_stackoverflow) | 1986-10-16 |
Family
ID=14913692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12558078A Granted JPS5552275A (en) | 1978-10-11 | 1978-10-11 | Junction field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5552275A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62254470A (ja) * | 1986-04-28 | 1987-11-06 | Seiko Instr & Electronics Ltd | 接合型薄膜トランジスタの製造方法 |
| JPS6326552A (ja) * | 1986-05-05 | 1988-02-04 | アイースタット コーポレーション | 粒子カウンタおよびその製造方法 |
| JP2013541199A (ja) * | 2010-09-13 | 2013-11-07 | アナログ デバイシス， インコーポレイテッド | 電圧保護のための接合型電界効果トランジスタ |
-
1978
- 1978-10-11 JP JP12558078A patent/JPS5552275A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62254470A (ja) * | 1986-04-28 | 1987-11-06 | Seiko Instr & Electronics Ltd | 接合型薄膜トランジスタの製造方法 |
| JPS6326552A (ja) * | 1986-05-05 | 1988-02-04 | アイースタット コーポレーション | 粒子カウンタおよびその製造方法 |
| JP2013541199A (ja) * | 2010-09-13 | 2013-11-07 | アナログ デバイシス， インコーポレイテッド | 電圧保護のための接合型電界効果トランジスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6146990B2 (enrdf_load_stackoverflow) | 1986-10-16 |
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