JPS55501079A - - Google Patents

Info

Publication number
JPS55501079A
JPS55501079A JP50020779A JP50020779A JPS55501079A JP S55501079 A JPS55501079 A JP S55501079A JP 50020779 A JP50020779 A JP 50020779A JP 50020779 A JP50020779 A JP 50020779A JP S55501079 A JPS55501079 A JP S55501079A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50020779A
Other languages
Japanese (ja)
Other versions
JPS6412106B2 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS55501079A publication Critical patent/JPS55501079A/ja
Publication of JPS6412106B2 publication Critical patent/JPS6412106B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211Gated diodes
    • H10D12/212Gated diodes having PN junction gates, e.g. field controlled diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/021Manufacture or treatment of interconnections within wafers or substrates

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
  • Electronic Switches (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP55500207A 1978-12-20 1979-12-06 Expired JPS6412106B2 (https=)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97202178A 1978-12-20 1978-12-20
US97205678A 1978-12-20 1978-12-20
US97202278A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
JPS55501079A true JPS55501079A (https=) 1980-12-04
JPS6412106B2 JPS6412106B2 (https=) 1989-02-28

Family

ID=27420763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55500207A Expired JPS6412106B2 (https=) 1978-12-20 1979-12-06

Country Status (18)

Country Link
JP (1) JPS6412106B2 (https=)
KR (1) KR830002293B1 (https=)
AU (1) AU529702B2 (https=)
CH (1) CH659151A5 (https=)
DD (1) DD147897A5 (https=)
ES (1) ES487066A1 (https=)
FR (1) FR2445026A1 (https=)
GB (1) GB2049283B (https=)
HU (1) HU181030B (https=)
IE (1) IE48892B1 (https=)
IL (1) IL58970A (https=)
IN (1) IN153497B (https=)
IT (1) IT1126603B (https=)
NL (1) NL7920184A (https=)
PL (1) PL220494A1 (https=)
SE (1) SE446139B (https=)
SG (1) SG32884G (https=)
WO (1) WO1980001337A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
NL8220133A (nl) * 1981-03-27 1983-02-01 Western Electric Co Gepoorte diodeschakelaar.
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (fr) * 1966-12-19 1968-11-22 Lucas Industries Ltd Diode semiconductrice
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
JPS4933432B1 (https=) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (https=) * 1973-07-23 1975-04-10
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same

Also Published As

Publication number Publication date
SE8005703L (sv) 1980-08-13
DD147897A5 (de) 1981-04-22
KR830002293B1 (ko) 1983-10-21
NL7920184A (nl) 1980-10-31
IN153497B (https=) 1984-07-21
IE48892B1 (en) 1985-06-12
ES487066A1 (es) 1980-09-16
FR2445026B1 (https=) 1983-08-19
IT7928206A0 (it) 1979-12-19
WO1980001337A1 (en) 1980-06-26
KR830001743A (ko) 1983-05-18
IE792474L (en) 1980-06-20
FR2445026A1 (fr) 1980-07-18
GB2049283A (en) 1980-12-17
AU529702B2 (en) 1983-06-16
AU5386679A (en) 1980-06-26
SE446139B (sv) 1986-08-11
PL220494A1 (https=) 1980-09-08
IT1126603B (it) 1986-05-21
IL58970A (en) 1982-07-30
HU181030B (en) 1983-05-30
IL58970A0 (en) 1980-03-31
JPS6412106B2 (https=) 1989-02-28
SG32884G (en) 1985-02-08
CH659151A5 (de) 1986-12-31
GB2049283B (en) 1983-07-27

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