JPS5548929A - Method of drawing by electron beam - Google Patents

Method of drawing by electron beam

Info

Publication number
JPS5548929A
JPS5548929A JP12080378A JP12080378A JPS5548929A JP S5548929 A JPS5548929 A JP S5548929A JP 12080378 A JP12080378 A JP 12080378A JP 12080378 A JP12080378 A JP 12080378A JP S5548929 A JPS5548929 A JP S5548929A
Authority
JP
Japan
Prior art keywords
electron beam
picture
approx
curvature
radius
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12080378A
Other languages
Japanese (ja)
Inventor
Tadahiro Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12080378A priority Critical patent/JPS5548929A/en
Publication of JPS5548929A publication Critical patent/JPS5548929A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain an excellent picture drawing while improving the dimensional precision of the picture; reducing its edge roughness; and shortening the radius of curvature of a corner portion by providing the dimension of an electron beam in such a manner that it is measured at a ratio of approx. 1:2 in a direction perpendicular to its scanning line. CONSTITUTION:An electron beam emitted from an electron gun 1 is led to pass through the anode 2 and converged 5 by a capacitor lens 4, then controlled by a blanking deflecting plate 6. The output beam is reconverged by a capacitor lens 8 and electrostatically deflected 9, before being scaled down and projected on a sample material 11 through an object lens 10. In this case, by providing the dimension of the electron beam in such a way that it is measured at a ratio of approx. 1:2 in a direction perpendicular to its scanning line, it becomes possible to increase the dimensional precision of the picture; reduce its edge roughness; and shorten the radius of the curvature of its corner portion, thus obtain an excellent picture drawing.
JP12080378A 1978-09-30 1978-09-30 Method of drawing by electron beam Pending JPS5548929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12080378A JPS5548929A (en) 1978-09-30 1978-09-30 Method of drawing by electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12080378A JPS5548929A (en) 1978-09-30 1978-09-30 Method of drawing by electron beam

Publications (1)

Publication Number Publication Date
JPS5548929A true JPS5548929A (en) 1980-04-08

Family

ID=14795364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12080378A Pending JPS5548929A (en) 1978-09-30 1978-09-30 Method of drawing by electron beam

Country Status (1)

Country Link
JP (1) JPS5548929A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005032838A (en) * 2003-07-08 2005-02-03 Canon Inc Method and device for charged particle beam lithography and method of manufacturing device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5316577A (en) * 1976-07-30 1978-02-15 Toshiba Corp Electron beam exposure apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5316577A (en) * 1976-07-30 1978-02-15 Toshiba Corp Electron beam exposure apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005032838A (en) * 2003-07-08 2005-02-03 Canon Inc Method and device for charged particle beam lithography and method of manufacturing device
JP4494734B2 (en) * 2003-07-08 2010-06-30 キヤノン株式会社 Charged particle beam drawing method, charged particle beam exposure apparatus, and device manufacturing method

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