JPS5539694A - Method of breaking ion beam - Google Patents
Method of breaking ion beamInfo
- Publication number
- JPS5539694A JPS5539694A JP7865379A JP7865379A JPS5539694A JP S5539694 A JPS5539694 A JP S5539694A JP 7865379 A JP7865379 A JP 7865379A JP 7865379 A JP7865379 A JP 7865379A JP S5539694 A JPS5539694 A JP S5539694A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- breaking
- breaking ion
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
- G21K1/025—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using multiple collimators, e.g. Bucky screens; other devices for eliminating undesired or dispersed radiation
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
- H01J2237/31755—Lithography using particular beams or near-field effects, e.g. STM-like techniques using ion beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31777—Lithography by projection
- H01J2237/31788—Lithography by projection through mask
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/917,610 US4158141A (en) | 1978-06-21 | 1978-06-21 | Process for channeling ion beams |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5539694A true JPS5539694A (en) | 1980-03-19 |
JPS5850415B2 JPS5850415B2 (ja) | 1983-11-10 |
Family
ID=25439051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54078653A Expired JPS5850415B2 (ja) | 1978-06-21 | 1979-06-21 | イオンビ−ムの遮断方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4158141A (ja) |
EP (1) | EP0006701B1 (ja) |
JP (1) | JPS5850415B2 (ja) |
DE (1) | DE2964894D1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5814532A (ja) * | 1981-07-17 | 1983-01-27 | Fujitsu Ltd | イオン・ビ−ム露光用マスクの製造方法 |
JPS5892223A (ja) * | 1981-11-27 | 1983-06-01 | Matsushita Electronics Corp | レジストパタ−ン形成方法 |
JPS5895383U (ja) * | 1981-12-22 | 1983-06-28 | ヤンマー農機株式会社 | 無限軌道帯を備えた農作業機のクロ−ラ位置確認装置 |
JPS60124940A (ja) * | 1983-12-12 | 1985-07-04 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 乾式ポジテイブ・ト−ンの微小パタ−ン形成方法 |
WO2018173812A1 (ja) * | 2017-03-22 | 2018-09-27 | 国立研究開発法人日本原子力研究開発機構 | イオンビーム機能性透過膜、イオンビーム機能性透過膜を用いたビームライン機器、イオンビーム機能性透過膜を用いたフィルター機器、フィルター機器の調整方法 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4357417A (en) * | 1979-04-24 | 1982-11-02 | Westinghouse Electric Corp. | High resolution lithography using protons or alpha particles |
US4310743A (en) * | 1979-09-24 | 1982-01-12 | Hughes Aircraft Company | Ion beam lithography process and apparatus using step-and-repeat exposure |
US4318750A (en) * | 1979-12-28 | 1982-03-09 | Westinghouse Electric Corp. | Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects |
FR2475069A1 (fr) * | 1980-02-01 | 1981-08-07 | Commissariat Energie Atomique | Procede de dopage rapide de semi-conducteurs |
DE3035200C2 (de) * | 1980-09-18 | 1982-09-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München | Maske für die Ionenstrahl-Schattenprojektion |
ZA8244B (en) * | 1981-01-16 | 1982-11-24 | Grace W R & Co | Method and apparatus for making printed circuit boards |
DE3121666A1 (de) * | 1981-05-30 | 1982-12-16 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren und einrichtung zur gegenseitigen ausrichtung von objekten bei roentgenstrahl- und korpuskularstrahl-belichtungsvorgaengen |
JPS5846652A (ja) * | 1981-09-14 | 1983-03-18 | Fujitsu Ltd | 多層配線形成方法 |
JPS5883801A (ja) * | 1981-11-13 | 1983-05-19 | Nec Corp | 光スイツチ |
JPS61127174A (ja) * | 1984-11-26 | 1986-06-14 | Toshiba Corp | 半導体装置の製造方法 |
US4757208A (en) * | 1986-03-07 | 1988-07-12 | Hughes Aircraft Company | Masked ion beam lithography system and method |
AT393333B (de) * | 1986-11-27 | 1991-09-25 | Ims Ionen Mikrofab Syst | Ionenprojektionseinrichtung fuer schattenprojektion |
JPS63161687A (ja) * | 1986-12-25 | 1988-07-05 | Tokin Corp | Qスイツチ |
US5416821A (en) * | 1993-05-10 | 1995-05-16 | Trw Inc. | Grid formed with a silicon substrate |
US6018566A (en) * | 1997-10-24 | 2000-01-25 | Trw Inc. | Grid formed with silicon substrate |
US6335534B1 (en) * | 1998-04-17 | 2002-01-01 | Kabushiki Kaisha Toshiba | Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes |
US6358860B1 (en) | 1999-10-07 | 2002-03-19 | Vlsi Standards, Inc. | Line width calibration standard manufacturing and certifying method |
DE102015114429B4 (de) | 2015-08-28 | 2017-05-11 | Infineon Technologies Ag | Partikelbestrahlungsgerät, Strahlmodifikatorvorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung mit einer Junctionabschlussextensionszone |
DE102016106119B4 (de) * | 2016-04-04 | 2019-03-07 | mi2-factory GmbH | Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern |
-
1978
- 1978-06-21 US US05/917,610 patent/US4158141A/en not_active Expired - Lifetime
-
1979
- 1979-06-08 DE DE7979301091T patent/DE2964894D1/de not_active Expired
- 1979-06-08 EP EP79301091A patent/EP0006701B1/en not_active Expired
- 1979-06-21 JP JP54078653A patent/JPS5850415B2/ja not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5814532A (ja) * | 1981-07-17 | 1983-01-27 | Fujitsu Ltd | イオン・ビ−ム露光用マスクの製造方法 |
JPS5892223A (ja) * | 1981-11-27 | 1983-06-01 | Matsushita Electronics Corp | レジストパタ−ン形成方法 |
JPS5895383U (ja) * | 1981-12-22 | 1983-06-28 | ヤンマー農機株式会社 | 無限軌道帯を備えた農作業機のクロ−ラ位置確認装置 |
JPS60124940A (ja) * | 1983-12-12 | 1985-07-04 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 乾式ポジテイブ・ト−ンの微小パタ−ン形成方法 |
JPH0376743B2 (ja) * | 1983-12-12 | 1991-12-06 | Intaanashonaru Bijinesu Mashiinzu Corp | |
WO2018173812A1 (ja) * | 2017-03-22 | 2018-09-27 | 国立研究開発法人日本原子力研究開発機構 | イオンビーム機能性透過膜、イオンビーム機能性透過膜を用いたビームライン機器、イオンビーム機能性透過膜を用いたフィルター機器、フィルター機器の調整方法 |
US11051390B2 (en) | 2017-03-22 | 2021-06-29 | Japan Atomic Energy Agency | Functional membrane for ion beam transmission, beam line device and filter device each having the same, and method of adjusting filter device |
Also Published As
Publication number | Publication date |
---|---|
JPS5850415B2 (ja) | 1983-11-10 |
EP0006701A1 (en) | 1980-01-09 |
US4158141A (en) | 1979-06-12 |
DE2964894D1 (en) | 1983-03-31 |
EP0006701B1 (en) | 1983-02-23 |
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