DE2964894D1 - A process for channelling ion beams - Google Patents

A process for channelling ion beams

Info

Publication number
DE2964894D1
DE2964894D1 DE7979301091T DE2964894T DE2964894D1 DE 2964894 D1 DE2964894 D1 DE 2964894D1 DE 7979301091 T DE7979301091 T DE 7979301091T DE 2964894 T DE2964894 T DE 2964894T DE 2964894 D1 DE2964894 D1 DE 2964894D1
Authority
DE
Germany
Prior art keywords
channelling
ion beams
beams
ion
channelling ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7979301091T
Other languages
English (en)
Inventor
Robert L Seliger
Paul A Sullivan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE2964894D1 publication Critical patent/DE2964894D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
    • G21K1/025—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using multiple collimators, e.g. Bucky screens; other devices for eliminating undesired or dispersed radiation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31755—Lithography using particular beams or near-field effects, e.g. STM-like techniques using ion beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31788—Lithography by projection through mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE7979301091T 1978-06-21 1979-06-08 A process for channelling ion beams Expired DE2964894D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/917,610 US4158141A (en) 1978-06-21 1978-06-21 Process for channeling ion beams

Publications (1)

Publication Number Publication Date
DE2964894D1 true DE2964894D1 (en) 1983-03-31

Family

ID=25439051

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7979301091T Expired DE2964894D1 (en) 1978-06-21 1979-06-08 A process for channelling ion beams

Country Status (4)

Country Link
US (1) US4158141A (de)
EP (1) EP0006701B1 (de)
JP (1) JPS5850415B2 (de)
DE (1) DE2964894D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4357417A (en) * 1979-04-24 1982-11-02 Westinghouse Electric Corp. High resolution lithography using protons or alpha particles
US4310743A (en) * 1979-09-24 1982-01-12 Hughes Aircraft Company Ion beam lithography process and apparatus using step-and-repeat exposure
US4318750A (en) * 1979-12-28 1982-03-09 Westinghouse Electric Corp. Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects
FR2475069A1 (fr) * 1980-02-01 1981-08-07 Commissariat Energie Atomique Procede de dopage rapide de semi-conducteurs
DE3035200C2 (de) * 1980-09-18 1982-09-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München Maske für die Ionenstrahl-Schattenprojektion
ZA8244B (en) * 1981-01-16 1982-11-24 Grace W R & Co Method and apparatus for making printed circuit boards
DE3121666A1 (de) * 1981-05-30 1982-12-16 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und einrichtung zur gegenseitigen ausrichtung von objekten bei roentgenstrahl- und korpuskularstrahl-belichtungsvorgaengen
JPS5814532A (ja) * 1981-07-17 1983-01-27 Fujitsu Ltd イオン・ビ−ム露光用マスクの製造方法
JPS5846652A (ja) * 1981-09-14 1983-03-18 Fujitsu Ltd 多層配線形成方法
JPS5883801A (ja) * 1981-11-13 1983-05-19 Nec Corp 光スイツチ
JPS5892223A (ja) * 1981-11-27 1983-06-01 Matsushita Electronics Corp レジストパタ−ン形成方法
JPS5895383U (ja) * 1981-12-22 1983-06-28 ヤンマー農機株式会社 無限軌道帯を備えた農作業機のクロ−ラ位置確認装置
US4507331A (en) * 1983-12-12 1985-03-26 International Business Machines Corporation Dry process for forming positive tone micro patterns
JPS61127174A (ja) * 1984-11-26 1986-06-14 Toshiba Corp 半導体装置の製造方法
US4757208A (en) * 1986-03-07 1988-07-12 Hughes Aircraft Company Masked ion beam lithography system and method
AT393333B (de) * 1986-11-27 1991-09-25 Ims Ionen Mikrofab Syst Ionenprojektionseinrichtung fuer schattenprojektion
JPS63161687A (ja) * 1986-12-25 1988-07-05 Tokin Corp Ｑスイツチ
US5416821A (en) * 1993-05-10 1995-05-16 Trw Inc. Grid formed with a silicon substrate
US6018566A (en) * 1997-10-24 2000-01-25 Trw Inc. Grid formed with silicon substrate
US6335534B1 (en) * 1998-04-17 2002-01-01 Kabushiki Kaisha Toshiba Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
US6358860B1 (en) 1999-10-07 2002-03-19 Vlsi Standards, Inc. Line width calibration standard manufacturing and certifying method
DE102015114429B4 (de) 2015-08-28 2017-05-11 Infineon Technologies Ag Partikelbestrahlungsgerät, Strahlmodifikatorvorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung mit einer Junctionabschlussextensionszone
DE102016106119B4 (de) * 2016-04-04 2019-03-07 mi2-factory GmbH Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern
WO2018173812A1 (ja) * 2017-03-22 2018-09-27 国立研究開発法人日本原子力研究開発機構 イオンビーム機能性透過膜、イオンビーム機能性透過膜を用いたビームライン機器、イオンビーム機能性透過膜を用いたフィルター機器、フィルター機器の調整方法

Also Published As

Publication number Publication date
JPS5850415B2 (ja) 1983-11-10
EP0006701B1 (de) 1983-02-23
US4158141A (en) 1979-06-12
EP0006701A1 (de) 1980-01-09
JPS5539694A (en) 1980-03-19

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee