JPS5539649A - Semiconductor rectifier element - Google Patents

Semiconductor rectifier element

Info

Publication number
JPS5539649A
JPS5539649A JP11278678A JP11278678A JPS5539649A JP S5539649 A JPS5539649 A JP S5539649A JP 11278678 A JP11278678 A JP 11278678A JP 11278678 A JP11278678 A JP 11278678A JP S5539649 A JPS5539649 A JP S5539649A
Authority
JP
Japan
Prior art keywords
junctions
substrate
junction
electrode
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11278678A
Other languages
Japanese (ja)
Other versions
JPS6252476B2 (en
Inventor
Toshiaki Goto
Makoto Namekata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11278678A priority Critical patent/JPS5539649A/en
Publication of JPS5539649A publication Critical patent/JPS5539649A/en
Publication of JPS6252476B2 publication Critical patent/JPS6252476B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a high voltage rectifier element through the process consisting of shorting P-N junctions with conductive coat and covering the surface of said P-N junctions with insulating film.
CONSTITUTION: P+-layers 6 are made by making band-shaped alternately-selective through diffusion lateral of an N-type Si substrate 1. Thus, a desired quantity of continuous P+NP+N... are obtained. Through holes 7 are made in said substrate 1 at every other P+-N junction, and connecting windows 8 and 8' are provided in SiO2 film 3 at the N-P+ junctions between said P+-N junctions or at the end portions of said substrate 1. Glass is provided over or buried in the side face of said hole 7. An Al electrode 9 and an electrode 9' with a junction pad are made at said windows 8 and 8', and chip with multi-layer P-N junction construction is obtained by dividing said substrate 1. Leads 11 and 12 are interconnected and covered with Si resin for example. Thereby, a number of P-N junctions can be connected in series. Therefore, a high withstand voltage value can be developed, and said P-N junctions operate much steadily since the surface thereof is protected by insulating film.
COPYRIGHT: (C)1980,JPO&Japio
JP11278678A 1978-09-12 1978-09-12 Semiconductor rectifier element Granted JPS5539649A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11278678A JPS5539649A (en) 1978-09-12 1978-09-12 Semiconductor rectifier element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11278678A JPS5539649A (en) 1978-09-12 1978-09-12 Semiconductor rectifier element

Publications (2)

Publication Number Publication Date
JPS5539649A true JPS5539649A (en) 1980-03-19
JPS6252476B2 JPS6252476B2 (en) 1987-11-05

Family

ID=14595465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11278678A Granted JPS5539649A (en) 1978-09-12 1978-09-12 Semiconductor rectifier element

Country Status (1)

Country Link
JP (1) JPS5539649A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4938317A (en) * 1972-08-21 1974-04-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4938317A (en) * 1972-08-21 1974-04-10

Also Published As

Publication number Publication date
JPS6252476B2 (en) 1987-11-05

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