JPS5539628A - Photoluminescence measuring method for semiconductor layer - Google Patents

Photoluminescence measuring method for semiconductor layer

Info

Publication number
JPS5539628A
JPS5539628A JP11238378A JP11238378A JPS5539628A JP S5539628 A JPS5539628 A JP S5539628A JP 11238378 A JP11238378 A JP 11238378A JP 11238378 A JP11238378 A JP 11238378A JP S5539628 A JPS5539628 A JP S5539628A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
forbidden band
width
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11238378A
Other languages
Japanese (ja)
Other versions
JPS567297B2 (en
Inventor
Takashi Fukui
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11238378A priority Critical patent/JPS5539628A/en
Publication of JPS5539628A publication Critical patent/JPS5539628A/en
Publication of JPS567297B2 publication Critical patent/JPS567297B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To facilitate photoluminescence measurement of a device whose width of a forbidden band is narrower at an upper semiconductor layer than at a lower semiconductor layer, by increasing selective degree of freedom of an external excitation light source.
CONSTITUTION: Width of a forbidden band E1 for an upper semiconductor layer 1 and E2 for an lower layer 2 are given as E1>E2. When light energy E0>E1, the external excitation light 4 excites and luminesces the layer 1 with a wave length λ1=ch/E2 from the layer 2. Although these two different rays with their wave length of λ1 and λ2, the ray 8 can be separated by means of an interference filter 9 which passes only λ2, and the ray 8 is recieved by light measuring device 6. With this method, any light energy E0 that is larger than the width of the forbidden band of the layer 1 can be used as an external excitation light source, thus selection of a light source becomes easier. Photoluminescence of an active layer with the forbidden band width of around 1eV can also be measured by means of an Ar laser.
COPYRIGHT: (C)1980,JPO&Japio
JP11238378A 1978-09-14 1978-09-14 Photoluminescence measuring method for semiconductor layer Granted JPS5539628A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11238378A JPS5539628A (en) 1978-09-14 1978-09-14 Photoluminescence measuring method for semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11238378A JPS5539628A (en) 1978-09-14 1978-09-14 Photoluminescence measuring method for semiconductor layer

Publications (2)

Publication Number Publication Date
JPS5539628A true JPS5539628A (en) 1980-03-19
JPS567297B2 JPS567297B2 (en) 1981-02-17

Family

ID=14585298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11238378A Granted JPS5539628A (en) 1978-09-14 1978-09-14 Photoluminescence measuring method for semiconductor layer

Country Status (1)

Country Link
JP (1) JPS5539628A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57152478A (en) * 1981-03-14 1982-09-20 Kubota Ltd Treatment for washing water in metallic surface treatment
JPS5889837A (en) * 1981-11-24 1983-05-28 Nippon Telegr & Teleph Corp <Ntt> Evaluating method for multilayered semiconductor
US4492871A (en) * 1981-10-07 1985-01-08 Agency Of Industrial Science & Technology Method for determining impurities in epitaxial silicon crystals
JPS6139596A (en) * 1984-07-31 1986-02-25 Fujitsu Ltd Evaluation of semiconductor crystal wafer
JPS63250835A (en) * 1987-04-08 1988-10-18 Hitachi Cable Ltd Inspection of epitaxial wafer
JPH02504652A (en) * 1987-08-04 1990-12-27 グート　ゲゼルシャフト　フュア　ウムヴエルトショーネンデ　テヒニーク　ミット　ベシュレンクテル　ハフツング Method and apparatus for purifying degreasing solution
JPH036388A (en) * 1989-06-01 1991-01-11 Naramoto Rika Kogyo Kk Method for activating deteriorated waste alkaline degreasing solution or alkaline electrolytic degreasing solution

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1975 *
JOURNAL OF APPLIED PHYSICS=1970 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57152478A (en) * 1981-03-14 1982-09-20 Kubota Ltd Treatment for washing water in metallic surface treatment
JPS6320310B2 (en) * 1981-03-14 1988-04-27 Kubota Ltd
US4492871A (en) * 1981-10-07 1985-01-08 Agency Of Industrial Science & Technology Method for determining impurities in epitaxial silicon crystals
JPS5889837A (en) * 1981-11-24 1983-05-28 Nippon Telegr & Teleph Corp <Ntt> Evaluating method for multilayered semiconductor
JPS637462B2 (en) * 1981-11-24 1988-02-17 Nippon Telegraph & Telephone
JPS6139596A (en) * 1984-07-31 1986-02-25 Fujitsu Ltd Evaluation of semiconductor crystal wafer
JPH0426236B2 (en) * 1984-07-31 1992-05-06 Fujitsu Ltd
JPS63250835A (en) * 1987-04-08 1988-10-18 Hitachi Cable Ltd Inspection of epitaxial wafer
JPH02504652A (en) * 1987-08-04 1990-12-27 グート　ゲゼルシャフト　フュア　ウムヴエルトショーネンデ　テヒニーク　ミット　ベシュレンクテル　ハフツング Method and apparatus for purifying degreasing solution
JPH036388A (en) * 1989-06-01 1991-01-11 Naramoto Rika Kogyo Kk Method for activating deteriorated waste alkaline degreasing solution or alkaline electrolytic degreasing solution

Also Published As

Publication number Publication date
JPS567297B2 (en) 1981-02-17

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