JPS52147967A - Test method for p-n junction depth - Google Patents

Test method for p-n junction depth

Info

Publication number
JPS52147967A
JPS52147967A JP6497076A JP6497076A JPS52147967A JP S52147967 A JPS52147967 A JP S52147967A JP 6497076 A JP6497076 A JP 6497076A JP 6497076 A JP6497076 A JP 6497076A JP S52147967 A JPS52147967 A JP S52147967A
Authority
JP
Japan
Prior art keywords
test method
junction depth
measurement
junction
luminescent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6497076A
Other languages
Japanese (ja)
Inventor
Kazuo Kiyohashi
Kazuharu Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6497076A priority Critical patent/JPS52147967A/en
Publication of JPS52147967A publication Critical patent/JPS52147967A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To secure an effective and errorless measurement of pn-junction through measurement of the luminescent region diameter of the luminescent semiconductor element.
COPYRIGHT: (C)1977,JPO&Japio
JP6497076A 1976-06-02 1976-06-02 Test method for p-n junction depth Pending JPS52147967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6497076A JPS52147967A (en) 1976-06-02 1976-06-02 Test method for p-n junction depth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6497076A JPS52147967A (en) 1976-06-02 1976-06-02 Test method for p-n junction depth

Publications (1)

Publication Number Publication Date
JPS52147967A true JPS52147967A (en) 1977-12-08

Family

ID=13273403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6497076A Pending JPS52147967A (en) 1976-06-02 1976-06-02 Test method for p-n junction depth

Country Status (1)

Country Link
JP (1) JPS52147967A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007271157A (en) * 2006-03-31 2007-10-18 Mitsubishi Heavy Ind Ltd Support structure for heat transfer tube

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007271157A (en) * 2006-03-31 2007-10-18 Mitsubishi Heavy Ind Ltd Support structure for heat transfer tube
US8573288B2 (en) 2006-03-31 2013-11-05 Mitsubishi Heavy Industries, Ltd. Heat transfer tube support structure

Similar Documents

Publication Publication Date Title
JPS5395571A (en) Semiconductor device
JPS52147967A (en) Test method for p-n junction depth
JPS542060A (en) Semiconductor wafer
JPS52129380A (en) Semiconductor device
JPS52110570A (en) Forming method of silicon epitaxial layer
JPS5425676A (en) Semiconductor device
JPS5269592A (en) Semiconductor luminescent element
JPS51121267A (en) Semiconductor wafer measuring device
JPS51144185A (en) Non-destructive recongnition method of light emitting characteristic o f wafer
JPS5227378A (en) Wafer test method
JPS5238888A (en) Device for measuring semiconductor luminous element
JPS5318972A (en) Monitoring method of wafer positioning state by probes
JPS54877A (en) Marking method for semiconductor chip
JPS53140976A (en) Semiconductor device
JPS53145479A (en) Temperature characteristics testing method of semiconductor device
JPS5379461A (en) Semiconductor device and its manufacturing process
JPS51139287A (en) Semi-conductor integrated circuit device
JPS52143186A (en) Taping device
JPS51137382A (en) Measuring method for junction point within semi conductor wafer
JPS5411688A (en) Manufacture for semiconductor device
JPS5428566A (en) Manufacture of semiconductor device
JPS53116083A (en) Manufacture for zener diode
JPS5424575A (en) Handling method of wafer
JPS5270772A (en) Semiconductor rectifier
JPS5231684A (en) Semiconductor device