JPS5538098A - Method of increasing gettering effect existing in semiconductor substrate bulk - Google Patents

Method of increasing gettering effect existing in semiconductor substrate bulk

Info

Publication number
JPS5538098A
JPS5538098A JP11437479A JP11437479A JPS5538098A JP S5538098 A JPS5538098 A JP S5538098A JP 11437479 A JP11437479 A JP 11437479A JP 11437479 A JP11437479 A JP 11437479A JP S5538098 A JPS5538098 A JP S5538098A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
gettering effect
substrate bulk
effect existing
increasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11437479A
Other languages
English (en)
Inventor
Giyasuton Kiyazukaar Bikutooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5538098A publication Critical patent/JPS5538098A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/023—Deep level dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
JP11437479A 1978-09-08 1979-09-07 Method of increasing gettering effect existing in semiconductor substrate bulk Pending JPS5538098A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7826223A FR2435818A1 (fr) 1978-09-08 1978-09-08 Procede pour accroitre l'effet de piegeage interne des corps semi-conducteurs

Publications (1)

Publication Number Publication Date
JPS5538098A true JPS5538098A (en) 1980-03-17

Family

ID=9212579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11437479A Pending JPS5538098A (en) 1978-09-08 1979-09-07 Method of increasing gettering effect existing in semiconductor substrate bulk

Country Status (5)

Country Link
US (1) US4220483A (ja)
EP (1) EP0008661B1 (ja)
JP (1) JPS5538098A (ja)
DE (1) DE2966258D1 (ja)
FR (1) FR2435818A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575364A (en) * 1980-06-13 1982-01-12 Nec Kyushu Ltd Mos integrated circuit device
JPS57128037A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Manufacture of semiconductor device
JPS57141931A (en) * 1981-02-25 1982-09-02 Fujitsu Ltd Manufacture of semiconductor device
JPS6066827A (ja) * 1983-09-24 1985-04-17 Mitsubishi Metal Corp シリコンウエハ−中への結晶欠陥導入制御法

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583375B2 (ja) * 1979-01-19 1983-01-21 超エル・エス・アイ技術研究組合 シリコン単結晶ウエハ−の製造方法
FR2460479A1 (fr) * 1979-06-29 1981-01-23 Ibm France Procede de caracterisation de la teneur en oxygene des barreaux de silicium tires selon la methode czochralski
JPS5680139A (en) * 1979-12-05 1981-07-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4597804A (en) * 1981-03-11 1986-07-01 Fujitsu Limited Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein
JPS5814538A (ja) * 1981-07-17 1983-01-27 Fujitsu Ltd 半導体装置の製造方法
JPS58501927A (ja) * 1981-12-31 1983-11-10 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン シリコン・ウエハ中の酸素析出を減少させるための方法
US4401505A (en) * 1982-03-31 1983-08-30 The United States Of America As Represented By The Administrator National Aeronautics And Space Administration Method of increasing minority carrier lifetime in silicon web or the like
US4447497A (en) * 1982-05-03 1984-05-08 Rockwell International Corporation CVD Process for producing monocrystalline silicon-on-cubic zirconia and article produced thereby
US4459159A (en) * 1982-09-29 1984-07-10 Mara William C O Method for making semi-insulating substrate by post-process heating of oxygenated and doped silicon
JPS59124136A (ja) * 1982-12-28 1984-07-18 Toshiba Corp 半導体ウエハの処理方法
US4548654A (en) * 1983-06-03 1985-10-22 Motorola, Inc. Surface denuding of silicon wafer
JPS6046022A (ja) * 1983-08-23 1985-03-12 Sumitomo Electric Ind Ltd イオン注入用基板の前処理方法
US4505759A (en) * 1983-12-19 1985-03-19 Mara William C O Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US4668330A (en) * 1985-12-05 1987-05-26 Monsanto Company Furnace contamination
US4859938A (en) * 1986-05-05 1989-08-22 Intel Corporation Novel technique to detect oxydonor generation in IC fabrication
JP2575545B2 (ja) * 1990-07-05 1997-01-29 株式会社東芝 半導体装置の製造方法
JPH0750713B2 (ja) * 1990-09-21 1995-05-31 コマツ電子金属株式会社 半導体ウェーハの熱処理方法
EP0502471A3 (en) * 1991-03-05 1995-10-11 Fujitsu Ltd Intrinsic gettering of a silicon substrate
JPH0684925A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体基板およびその処理方法
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
KR101067901B1 (ko) 2001-12-26 2011-09-28 맷슨 테크날러지 캐나다 인코퍼레이티드 온도 측정 및 열처리 방법과 시스템
KR20120045040A (ko) 2002-12-20 2012-05-08 맷슨 테크날러지 캐나다 인코퍼레이티드 피가공물 지지 방법
WO2005059991A1 (en) 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
CN101401208A (zh) * 2006-03-15 2009-04-01 皇家飞利浦电子股份有限公司 用于辐射检测的半导体器件
US8454356B2 (en) 2006-11-15 2013-06-04 Mattson Technology, Inc. Systems and methods for supporting a workpiece during heat-treating
JP5718809B2 (ja) 2008-05-16 2015-05-13 マトソン テクノロジー、インコーポレイテッド 加工品の破壊を防止する方法および装置
DE102010023221A1 (de) * 2010-06-09 2011-12-15 Sovello Ag Verfahren zur Herstellung von Photovoltaikmodulen
CN106960782A (zh) * 2017-03-31 2017-07-18 上海先进半导体制造股份有限公司 半导体衬底的防漏电方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE684801A (ja) * 1965-08-05 1967-01-03
US3615873A (en) * 1969-06-03 1971-10-26 Sprague Electric Co Method of stabilizing mos devices
US3723053A (en) * 1971-10-26 1973-03-27 Myers Platter S Heat treating process for semiconductor fabrication
FR2191272A1 (ja) * 1972-06-27 1974-02-01 Ibm France
US3829335A (en) * 1972-10-20 1974-08-13 Scient Micro Syst Inc Method for processing semiconductor wafers
US3905162A (en) * 1974-07-23 1975-09-16 Silicon Material Inc Method of preparing high yield semiconductor wafer
IN140598B (ja) * 1974-08-02 1976-12-04 Rca Corp
US3997368A (en) * 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
US4053335A (en) * 1976-04-02 1977-10-11 International Business Machines Corporation Method of gettering using backside polycrystalline silicon
US4144099A (en) * 1977-10-31 1979-03-13 International Business Machines Corporation High performance silicon wafer and fabrication process

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575364A (en) * 1980-06-13 1982-01-12 Nec Kyushu Ltd Mos integrated circuit device
JPS57128037A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Manufacture of semiconductor device
JPS57141931A (en) * 1981-02-25 1982-09-02 Fujitsu Ltd Manufacture of semiconductor device
JPS6066827A (ja) * 1983-09-24 1985-04-17 Mitsubishi Metal Corp シリコンウエハ−中への結晶欠陥導入制御法
JPH0469422B2 (ja) * 1983-09-24 1992-11-06 Mitsubishi Materials Corp

Also Published As

Publication number Publication date
US4220483A (en) 1980-09-02
DE2966258D1 (en) 1983-11-10
EP0008661B1 (fr) 1983-10-05
FR2435818B1 (ja) 1982-06-04
EP0008661A1 (fr) 1980-03-19
FR2435818A1 (fr) 1980-04-04

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