JPS553656A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS553656A
JPS553656A JP7576278A JP7576278A JPS553656A JP S553656 A JPS553656 A JP S553656A JP 7576278 A JP7576278 A JP 7576278A JP 7576278 A JP7576278 A JP 7576278A JP S553656 A JPS553656 A JP S553656A
Authority
JP
Japan
Prior art keywords
region
mosfet
sit
injector
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7576278A
Other languages
Japanese (ja)
Other versions
JPS6213824B2 (en
Inventor
Junichi Nishizawa
Tadahiro Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP7576278A priority Critical patent/JPS553656A/en
Publication of JPS553656A publication Critical patent/JPS553656A/en
Publication of JPS6213824B2 publication Critical patent/JPS6213824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To provide a high-density, high-speed operation, injector is used in I<2>R activation in MOSFET and bipolar transistor complex mode by using electrostatic inductive transistor, thereby allowing high current in small area. CONSTITUTION:n<-> region 12, n<+> region 13, p<+> regions 14 to 16 are formed on n<+> region 11. The region 11 functions as the source region of inverted type electrostatic inductive transistor SIT, the region 14 as the source region of MOSFET working as injector, the region 15 as MOSFET drain as well as SIT driving gate, the region 16 is a fixed potential gate, and the regions 13-1 to 13-4 are SIT driving gates. This constitutes in effect a parallel connection of MOSFET and the bipolar transistor BJT, thus allowing high current in a small area, providing high-density, high-speed operation.
JP7576278A 1978-06-22 1978-06-22 Semiconductor integrated circuit Granted JPS553656A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7576278A JPS553656A (en) 1978-06-22 1978-06-22 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7576278A JPS553656A (en) 1978-06-22 1978-06-22 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS553656A true JPS553656A (en) 1980-01-11
JPS6213824B2 JPS6213824B2 (en) 1987-03-28

Family

ID=13585552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7576278A Granted JPS553656A (en) 1978-06-22 1978-06-22 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS553656A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6020910A (en) * 1983-07-15 1985-02-02 Shin Etsu Chem Co Ltd Production of vinyl chloride copolymer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6020910A (en) * 1983-07-15 1985-02-02 Shin Etsu Chem Co Ltd Production of vinyl chloride copolymer

Also Published As

Publication number Publication date
JPS6213824B2 (en) 1987-03-28

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