JPS553652A - Mnos memory device - Google Patents

Mnos memory device

Info

Publication number
JPS553652A
JPS553652A JP7562678A JP7562678A JPS553652A JP S553652 A JPS553652 A JP S553652A JP 7562678 A JP7562678 A JP 7562678A JP 7562678 A JP7562678 A JP 7562678A JP S553652 A JPS553652 A JP S553652A
Authority
JP
Japan
Prior art keywords
nitride layer
electrode
memory device
mnos memory
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7562678A
Other languages
Japanese (ja)
Inventor
Motoyuki Uchino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP7562678A priority Critical patent/JPS553652A/en
Publication of JPS553652A publication Critical patent/JPS553652A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Abstract

PURPOSE:Si-containing Al is used as an evaporated Al electrode to effectively prevent Al electrode diffusion into Si nitride layer, providing a Si nitride layer controlled in constant thickness. CONSTITUTION:A MNOS memory device includes an extremely thin Si oxide layer 2, Si nitride layer 3 and Al electrode 4. The Al electrode 4, if provided by Si-containing Al evaporation, effectively prevents Al from diffusing into the Si nitride layer 3 and substantially eliminates thickness reduction in the Si nitride layer 3. Thus, barrier decrease between the metal electrode 4 and Si nitride layer 3 is protected, reducing deterioration in electric property. An application of a given voltage provides a large threshold voltage variations Vth, enabling to select a large ON/OFF level and further to enhance memory storage property.
JP7562678A 1978-06-22 1978-06-22 Mnos memory device Pending JPS553652A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7562678A JPS553652A (en) 1978-06-22 1978-06-22 Mnos memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7562678A JPS553652A (en) 1978-06-22 1978-06-22 Mnos memory device

Publications (1)

Publication Number Publication Date
JPS553652A true JPS553652A (en) 1980-01-11

Family

ID=13581617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7562678A Pending JPS553652A (en) 1978-06-22 1978-06-22 Mnos memory device

Country Status (1)

Country Link
JP (1) JPS553652A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58186967A (en) * 1982-04-26 1983-11-01 Toshiba Corp Manufacture of thin film semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58186967A (en) * 1982-04-26 1983-11-01 Toshiba Corp Manufacture of thin film semiconductor device

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