JPS5534310A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5534310A
JPS5534310A JP10603978A JP10603978A JPS5534310A JP S5534310 A JPS5534310 A JP S5534310A JP 10603978 A JP10603978 A JP 10603978A JP 10603978 A JP10603978 A JP 10603978A JP S5534310 A JPS5534310 A JP S5534310A
Authority
JP
Japan
Prior art keywords
dummy
line
cell
select
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10603978A
Other languages
Japanese (ja)
Inventor
Kazunori Ouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10603978A priority Critical patent/JPS5534310A/en
Publication of JPS5534310A publication Critical patent/JPS5534310A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To generate the select signal by the dummy cell select line a predetermined time delayed later than the data cell select line, thereby prevent the reversion of the potential relation of the data line in the simiconductor memory circuit of one element. CONSTITUTION:m of the memory cell select lines 11 and m pairs of data lines 12 and one element memory 13 at an intersecting point of them are provided. The pairs of the data lines are provided with the differential type information detecting circuit 14. To the data line, the dummy cell 15 and the dummy select line 16 are connected. The dummy select line 16 of the main memoty circuit constructed in the above mentioned manner is provided with the delay circuit 21, and by delaying the generation of the select signal of the dummy silect line later by a predetermined time than the memory cell select line, the conducting time of the dummy cell coincides with the conducting time of the memory cell. Accordingly, the memory cell and the dummy cell is connected electrically to the data line simultaneously. The reversing condition of the potential in the data line can be prevented from generating.
JP10603978A 1978-08-30 1978-08-30 Semiconductor memory device Pending JPS5534310A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10603978A JPS5534310A (en) 1978-08-30 1978-08-30 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10603978A JPS5534310A (en) 1978-08-30 1978-08-30 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5534310A true JPS5534310A (en) 1980-03-10

Family

ID=14423488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10603978A Pending JPS5534310A (en) 1978-08-30 1978-08-30 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5534310A (en)

Similar Documents

Publication Publication Date Title
JPS5634186A (en) Bipolar memory circuit
JPS52142936A (en) Semiconductor memory circuit
JPS6435793A (en) Semiconductor memory
JPS53134337A (en) Sense circuit
JPS54139344A (en) Clock-system static memory
KR880009376A (en) Semiconductor memory
JPS5538603A (en) Semiconductor memory device
JPS5562588A (en) Semiconductor memory circuit
JPS5534310A (en) Semiconductor memory device
JPS5427734A (en) Dynamic semiconductor memory
JPS56137580A (en) Semiconductor storage device
JPS5558892A (en) Flip flop circuit
JPS5611689A (en) Electronic unit
JPS57169994A (en) Semiconductor storage device
JPS5227979A (en) Signal transmitter device
GB1305447A (en)
JPS5411648A (en) Semiconductor memory unit
JPS56137581A (en) Random access memory circuit
JPS5589985A (en) Semiconductor memory unit
JPS5378131A (en) Semiconductor memory element
JPS55108992A (en) Semiconductor memory device
JPS5443631A (en) Memory array body
JPS5294784A (en) Semiconductor device
JPS5534309A (en) Semiconductor memory device
JPS55160388A (en) Semiconductor memory