JPS5534310A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS5534310A JPS5534310A JP10603978A JP10603978A JPS5534310A JP S5534310 A JPS5534310 A JP S5534310A JP 10603978 A JP10603978 A JP 10603978A JP 10603978 A JP10603978 A JP 10603978A JP S5534310 A JPS5534310 A JP S5534310A
- Authority
- JP
- Japan
- Prior art keywords
- dummy
- line
- cell
- select
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuitsĀ
- G11C11/4099—Dummy cell treatment; Reference voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To generate the select signal by the dummy cell select line a predetermined time delayed later than the data cell select line, thereby prevent the reversion of the potential relation of the data line in the simiconductor memory circuit of one element. CONSTITUTION:m of the memory cell select lines 11 and m pairs of data lines 12 and one element memory 13 at an intersecting point of them are provided. The pairs of the data lines are provided with the differential type information detecting circuit 14. To the data line, the dummy cell 15 and the dummy select line 16 are connected. The dummy select line 16 of the main memoty circuit constructed in the above mentioned manner is provided with the delay circuit 21, and by delaying the generation of the select signal of the dummy silect line later by a predetermined time than the memory cell select line, the conducting time of the dummy cell coincides with the conducting time of the memory cell. Accordingly, the memory cell and the dummy cell is connected electrically to the data line simultaneously. The reversing condition of the potential in the data line can be prevented from generating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10603978A JPS5534310A (en) | 1978-08-30 | 1978-08-30 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10603978A JPS5534310A (en) | 1978-08-30 | 1978-08-30 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5534310A true JPS5534310A (en) | 1980-03-10 |
Family
ID=14423488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10603978A Pending JPS5534310A (en) | 1978-08-30 | 1978-08-30 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5534310A (en) |
-
1978
- 1978-08-30 JP JP10603978A patent/JPS5534310A/en active Pending
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