JPS5532095A - Stabilizing resist image - Google Patents

Stabilizing resist image

Info

Publication number
JPS5532095A
JPS5532095A JP8514379A JP8514379A JPS5532095A JP S5532095 A JPS5532095 A JP S5532095A JP 8514379 A JP8514379 A JP 8514379A JP 8514379 A JP8514379 A JP 8514379A JP S5532095 A JPS5532095 A JP S5532095A
Authority
JP
Japan
Prior art keywords
stabilizing
resist image
resist
image
stabilizing resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8514379A
Other languages
English (en)
Other versions
JPS5640332B2 (ja
Inventor
Shioorien Ma Uiriamu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5532095A publication Critical patent/JPS5532095A/ja
Publication of JPS5640332B2 publication Critical patent/JPS5640332B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP8514379A 1978-08-24 1979-07-06 Stabilizing resist image Granted JPS5532095A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/936,425 US4187331A (en) 1978-08-24 1978-08-24 Fluorine plasma resist image hardening

Publications (2)

Publication Number Publication Date
JPS5532095A true JPS5532095A (en) 1980-03-06
JPS5640332B2 JPS5640332B2 (ja) 1981-09-19

Family

ID=25468611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8514379A Granted JPS5532095A (en) 1978-08-24 1979-07-06 Stabilizing resist image

Country Status (4)

Country Link
US (1) US4187331A (ja)
EP (1) EP0008389B1 (ja)
JP (1) JPS5532095A (ja)
DE (1) DE2966185D1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825636A (ja) * 1981-07-22 1983-02-15 バスフ・アクチエンゲゼルシヤフト 光重合グラビア印刷版の製造方法
JPS5884430A (ja) * 1981-11-14 1983-05-20 Daikin Ind Ltd レジスト膜の耐エツチング性増大方法
JPS6237928A (ja) * 1985-08-13 1987-02-18 Matsushita Electronics Corp 金属パタ−ン形成方法
JPH01304730A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 半導体製造装置

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55129345A (en) * 1979-03-29 1980-10-07 Ulvac Corp Electron beam plate making method by vapor phase film formation and vapor phase development
JPS5814454B2 (ja) * 1979-11-07 1983-03-19 信越化学工業株式会社 塩化ビニル系樹脂成形品の表面処理方法
US4259369A (en) * 1979-12-13 1981-03-31 International Business Machines Corporation Image hardening process
GB2121198A (en) * 1982-05-26 1983-12-14 Philips Electronic Associated Plasma-etch resistant mask formation
FR2534040B1 (fr) * 1982-10-04 1988-05-13 Commissariat Energie Atomique Reacteur et procede associe pour traitement de stabilisation de resines utilisees notamment en gravure seche
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
US4552831A (en) * 1984-02-06 1985-11-12 International Business Machines Corporation Fabrication method for controlled via hole process
US4705597A (en) * 1985-04-15 1987-11-10 Harris Corporation Photoresist tapering process
EP0247153A4 (en) * 1985-11-27 1988-05-19 Macdermid Inc THERMALLY STABILIZED, LIGHT-RESISTANT IMAGES.
US4701390A (en) * 1985-11-27 1987-10-20 Macdermid, Incorporated Thermally stabilized photoresist images
US4904866A (en) * 1988-11-17 1990-02-27 Applied Electron Corporation Wide area soft vacuum abnormal glow electron beam discharge hardening process
US5407787A (en) * 1993-04-14 1995-04-18 The United States Of America As Represented By The Secretary Of The Navy Process to fabricate thick coplanar microwave electrode structures
FR2716547A1 (fr) * 1994-02-24 1995-08-25 Fujitsu Ltd Procédé pour former un motif de résist et pour fabriquer un dispositif à semi-conducteur.
JP3349001B2 (ja) * 1994-12-29 2002-11-20 ソニー株式会社 金属膜の形成方法
JP3360461B2 (ja) * 1995-01-31 2002-12-24 ソニー株式会社 メタル成膜工程の前処理方法
EP0911697A3 (en) * 1997-10-22 1999-09-15 Interuniversitair Microelektronica Centrum Vzw A fluorinated hard mask for micropatterning of polymers
US6183940B1 (en) * 1998-03-17 2001-02-06 Integrated Device Technology, Inc. Method of retaining the integrity of a photoresist pattern
AU3964199A (en) * 1998-04-07 1999-10-25 Euv Limited Liability Corporation Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths
US6103457A (en) * 1998-05-28 2000-08-15 Philips Electronics North America Corp. Method for reducing faceting on a photoresist layer during an etch process
DE19844418A1 (de) * 1998-09-28 2000-04-06 Siemens Ag Schutzschicht für die Mikrostrukturtechnik und deren Herstellung
US20050026084A1 (en) * 2003-07-31 2005-02-03 Garza Cesar M. Semiconductor device and method for elimination of resist linewidth slimming by fluorination
US7138180B2 (en) * 2003-10-16 2006-11-21 Wisconsin Alumni Research Foundation Hard carbon films formed from plasma treated polymer surfaces
US7157377B2 (en) * 2004-02-13 2007-01-02 Freescale Semiconductor, Inc. Method of making a semiconductor device using treated photoresist

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52154402A (en) * 1976-05-26 1977-12-22 Tokyo Ouka Kougiyou Kk New method of treating printing plate material
JPS543473A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3402073A (en) * 1964-08-04 1968-09-17 Texas Instruments Inc Process for making thin film circuit devices
US3674667A (en) * 1969-07-23 1972-07-04 Allis Chalmers Mfg Co Process for increasing water repellency of cotton cloth
US3687832A (en) * 1970-11-23 1972-08-29 Surface Activation Corp Production of improved polymeric materials using electrical gas discharges
US3816196A (en) * 1971-06-07 1974-06-11 Gen Electric Passivation of photoresist materials used in selective plasma etching
US3806365A (en) * 1971-08-20 1974-04-23 Lee Corp Process for use in the manufacture of semiconductive devices
US3867216A (en) * 1972-05-12 1975-02-18 Adir Jacob Process and material for manufacturing semiconductor devices
US3880684A (en) * 1973-08-03 1975-04-29 Mitsubishi Electric Corp Process for preparing semiconductor
US3879597A (en) * 1974-08-16 1975-04-22 Int Plasma Corp Plasma etching device and process
US4068018A (en) * 1974-09-19 1978-01-10 Nippon Electric Co., Ltd. Process for preparing a mask for use in manufacturing a semiconductor device
US3920483A (en) * 1974-11-25 1975-11-18 Ibm Method of ion implantation through a photoresist mask
US4018945A (en) * 1975-06-19 1977-04-19 Rca Corporation Method of making a metallized video disc having an insulating layer thereon
DE2726813C2 (de) * 1976-06-17 1984-02-23 Motorola, Inc., 60196 Schaumburg, Ill. Verfahren zur Herstellung eines mit einem Muster versehenen Substrats
DE2703738A1 (de) * 1977-01-29 1978-08-03 Licentia Gmbh Verfahren zum strukturierten aetzen einer halbleiteranordnung
US4125650A (en) * 1977-08-08 1978-11-14 International Business Machines Corporation Resist image hardening process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52154402A (en) * 1976-05-26 1977-12-22 Tokyo Ouka Kougiyou Kk New method of treating printing plate material
JPS543473A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825636A (ja) * 1981-07-22 1983-02-15 バスフ・アクチエンゲゼルシヤフト 光重合グラビア印刷版の製造方法
JPH0416780B2 (ja) * 1981-07-22 1992-03-25 Basf Ag
JPS5884430A (ja) * 1981-11-14 1983-05-20 Daikin Ind Ltd レジスト膜の耐エツチング性増大方法
JPS6237928A (ja) * 1985-08-13 1987-02-18 Matsushita Electronics Corp 金属パタ−ン形成方法
JPH01304730A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 半導体製造装置

Also Published As

Publication number Publication date
US4187331A (en) 1980-02-05
DE2966185D1 (en) 1983-10-27
JPS5640332B2 (ja) 1981-09-19
EP0008389A1 (de) 1980-03-05
EP0008389B1 (de) 1983-09-21

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