JPS552971A - Film thickness measuring method - Google Patents

Film thickness measuring method

Info

Publication number
JPS552971A
JPS552971A JP7667178A JP7667178A JPS552971A JP S552971 A JPS552971 A JP S552971A JP 7667178 A JP7667178 A JP 7667178A JP 7667178 A JP7667178 A JP 7667178A JP S552971 A JPS552971 A JP S552971A
Authority
JP
Japan
Prior art keywords
ray
layer
fluorescent
ion
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7667178A
Other languages
Japanese (ja)
Inventor
Yoji Masuko
Takayuki Matsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7667178A priority Critical patent/JPS552971A/en
Publication of JPS552971A publication Critical patent/JPS552971A/en
Pending legal-status Critical Current

Links

Landscapes

  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To enable a film's thickness to be measured by fluorescent X-ray method by pouring a fixed amount of ion on silicon wafer surface in advance of piling of glass layer.
CONSTITUTION: Ion is poured onto surface of a silicon wafer 1 on a fixed condition to form a layer 2 of an impurity such as argon, etc. A glass layer 3, which is an objective of measurement (of thickness), is piled on this impurity layer 2 using CVD or some other method. By radiation of a primary X-ray 4, a fluorescent X-ray 5 is excited at the ion-pouring layer 2. Now, it is possible to measure film thickness of the glass layer 3 by detecting amount of this fluorescent X-ray.
COPYRIGHT: (C)1980,JPO&Japio
JP7667178A 1978-06-23 1978-06-23 Film thickness measuring method Pending JPS552971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7667178A JPS552971A (en) 1978-06-23 1978-06-23 Film thickness measuring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7667178A JPS552971A (en) 1978-06-23 1978-06-23 Film thickness measuring method

Publications (1)

Publication Number Publication Date
JPS552971A true JPS552971A (en) 1980-01-10

Family

ID=13611877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7667178A Pending JPS552971A (en) 1978-06-23 1978-06-23 Film thickness measuring method

Country Status (1)

Country Link
JP (1) JPS552971A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003025532A1 (en) * 2001-09-17 2003-03-27 Matsushita Electric Industrial Co., Ltd. Strain sensor and production method therefor
WO2021124396A1 (en) * 2019-12-16 2021-06-24 三菱電機ビルテクノサービス株式会社 Elevator door, and maintenance component for elevator door

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003025532A1 (en) * 2001-09-17 2003-03-27 Matsushita Electric Industrial Co., Ltd. Strain sensor and production method therefor
US7043996B2 (en) 2001-09-17 2006-05-16 Matsushita Electric Industrial Co., Inc. Strain sensor and production method therefor
WO2021124396A1 (en) * 2019-12-16 2021-06-24 三菱電機ビルテクノサービス株式会社 Elevator door, and maintenance component for elevator door

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