JPS5527783A - Semiconductor amplifier - Google Patents

Semiconductor amplifier

Info

Publication number
JPS5527783A
JPS5527783A JP10129178A JP10129178A JPS5527783A JP S5527783 A JPS5527783 A JP S5527783A JP 10129178 A JP10129178 A JP 10129178A JP 10129178 A JP10129178 A JP 10129178A JP S5527783 A JPS5527783 A JP S5527783A
Authority
JP
Japan
Prior art keywords
current
output
resistance
terminal
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10129178A
Other languages
Japanese (ja)
Inventor
Koichi Fukaya
Hisashi Sotokari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10129178A priority Critical patent/JPS5527783A/en
Publication of JPS5527783A publication Critical patent/JPS5527783A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To prevent the breakdown of the output transistor at the contact time between the output terminal and the power terminal by detecting the voltage drop based on the resistance component of the connective conductor through which the output current flows and then breaking the current of the output transistor. CONSTITUTION:When output terminal d touches negavie terminal f of the power source, transistor Q14 is biased via negative feedback resistance Rb for conduction. Thus current IO flows to Q16 and Q18, and then the large current begins to flow to Q18. At the same time, the voltage drop proportional to the current occurs across resistance R12 dividing voltage VBE of Q18 and equivalent resistance Rd of the bonding wire of the like. And when the dropped voltage compound value becomes higher than VBE of Q12, Q12 conducts to actuate the current Miller circuit consisting of diode D14 and Q11 and then break Q18 of the output step and IBE. Thus the breakdown of Q18 due to the abnormal overcurrent can be avoided.
JP10129178A 1978-08-18 1978-08-18 Semiconductor amplifier Pending JPS5527783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10129178A JPS5527783A (en) 1978-08-18 1978-08-18 Semiconductor amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10129178A JPS5527783A (en) 1978-08-18 1978-08-18 Semiconductor amplifier

Publications (1)

Publication Number Publication Date
JPS5527783A true JPS5527783A (en) 1980-02-28

Family

ID=14296733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10129178A Pending JPS5527783A (en) 1978-08-18 1978-08-18 Semiconductor amplifier

Country Status (1)

Country Link
JP (1) JPS5527783A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03175063A (en) * 1989-09-22 1991-07-30 Victor Co Of Japan Ltd Recorder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03175063A (en) * 1989-09-22 1991-07-30 Victor Co Of Japan Ltd Recorder

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