JPS5527699A - Monolithic integrated circuit and method of manufacturing same - Google Patents

Monolithic integrated circuit and method of manufacturing same

Info

Publication number
JPS5527699A
JPS5527699A JP10392579A JP10392579A JPS5527699A JP S5527699 A JPS5527699 A JP S5527699A JP 10392579 A JP10392579 A JP 10392579A JP 10392579 A JP10392579 A JP 10392579A JP S5527699 A JPS5527699 A JP S5527699A
Authority
JP
Japan
Prior art keywords
integrated circuit
manufacturing same
monolithic integrated
monolithic
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10392579A
Other languages
Japanese (ja)
Inventor
Kerunaa Warutaa
Kuniipukanpu Heruman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5527699A publication Critical patent/JPS5527699A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP10392579A 1978-08-14 1979-08-14 Monolithic integrated circuit and method of manufacturing same Pending JPS5527699A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782835642 DE2835642A1 (en) 1978-08-14 1978-08-14 MONOLITHIC INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS AND METHOD FOR THEIR PRODUCTION

Publications (1)

Publication Number Publication Date
JPS5527699A true JPS5527699A (en) 1980-02-27

Family

ID=6047037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10392579A Pending JPS5527699A (en) 1978-08-14 1979-08-14 Monolithic integrated circuit and method of manufacturing same

Country Status (4)

Country Link
JP (1) JPS5527699A (en)
DE (1) DE2835642A1 (en)
FR (1) FR2433832A1 (en)
GB (1) GB2029641A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111179A (en) * 1979-02-13 1980-08-27 Thomson Csf Field effect transistor structure* saturated resistor including same structure* field effect transistor and logic circuit
JPS56140668A (en) * 1980-03-27 1981-11-04 Ibm Method of manufacturing semiconductor device
JPS58143562A (en) * 1982-02-22 1983-08-26 Toshiba Corp Gaas integrated circuit
JP2011134971A (en) * 2009-12-25 2011-07-07 Denso Corp Semiconductor device and method of manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496982A1 (en) 1980-12-24 1982-06-25 Labo Electronique Physique PROCESS FOR PRODUCING FIELD EFFECT TRANSISTORS, SELF-ALIGNED GRID, AND TRANSISTORS THUS OBTAINED

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999281A (en) * 1976-01-16 1976-12-28 The United States Of America As Represented By The Secretary Of The Air Force Method for fabricating a gridded Schottky barrier field effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111179A (en) * 1979-02-13 1980-08-27 Thomson Csf Field effect transistor structure* saturated resistor including same structure* field effect transistor and logic circuit
JPS56140668A (en) * 1980-03-27 1981-11-04 Ibm Method of manufacturing semiconductor device
JPS58143562A (en) * 1982-02-22 1983-08-26 Toshiba Corp Gaas integrated circuit
JP2011134971A (en) * 2009-12-25 2011-07-07 Denso Corp Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
DE2835642A1 (en) 1980-02-28
FR2433832A1 (en) 1980-03-14
GB2029641A (en) 1980-03-19

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