JPS5527699A - Monolithic integrated circuit and method of manufacturing same - Google Patents

Monolithic integrated circuit and method of manufacturing same

Info

Publication number
JPS5527699A
JPS5527699A JP10392579A JP10392579A JPS5527699A JP S5527699 A JPS5527699 A JP S5527699A JP 10392579 A JP10392579 A JP 10392579A JP 10392579 A JP10392579 A JP 10392579A JP S5527699 A JPS5527699 A JP S5527699A
Authority
JP
Japan
Prior art keywords
integrated circuit
manufacturing same
monolithic integrated
monolithic
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10392579A
Other languages
Japanese (ja)
Inventor
Kerunaa Warutaa
Kuniipukanpu Heruman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5527699A publication Critical patent/JPS5527699A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
JP10392579A 1978-08-14 1979-08-14 Monolithic integrated circuit and method of manufacturing same Pending JPS5527699A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782835642 DE2835642A1 (en) 1978-08-14 1978-08-14 MONOLITHIC INTEGRATED CIRCUIT WITH FIELD EFFECT TRANSISTORS AND METHOD FOR THEIR PRODUCTION

Publications (1)

Publication Number Publication Date
JPS5527699A true JPS5527699A (en) 1980-02-27

Family

ID=6047037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10392579A Pending JPS5527699A (en) 1978-08-14 1979-08-14 Monolithic integrated circuit and method of manufacturing same

Country Status (4)

Country Link
JP (1) JPS5527699A (en)
DE (1) DE2835642A1 (en)
FR (1) FR2433832A1 (en)
GB (1) GB2029641A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111179A (en) * 1979-02-13 1980-08-27 Thomson Csf Field effect transistor structure* saturated resistor including same structure* field effect transistor and logic circuit
JPS56140668A (en) * 1980-03-27 1981-11-04 Ibm Method of manufacturing semiconductor device
JPS58143562A (en) * 1982-02-22 1983-08-26 Toshiba Corp Gaas integrated circuit
JP2011134971A (en) * 2009-12-25 2011-07-07 Denso Corp Semiconductor device and method of manufacturing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999281A (en) * 1976-01-16 1976-12-28 The United States Of America As Represented By The Secretary Of The Air Force Method for fabricating a gridded Schottky barrier field effect transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111179A (en) * 1979-02-13 1980-08-27 Thomson Csf Field effect transistor structure* saturated resistor including same structure* field effect transistor and logic circuit
JPS6348196B2 (en) * 1979-02-13 1988-09-28 Tomuson Sa
JPS56140668A (en) * 1980-03-27 1981-11-04 Ibm Method of manufacturing semiconductor device
JPH0434301B2 (en) * 1980-03-27 1992-06-05 Intaanashonaru Bijinesu Mashiinzu Corp
JPS58143562A (en) * 1982-02-22 1983-08-26 Toshiba Corp Gaas integrated circuit
JP2011134971A (en) * 2009-12-25 2011-07-07 Denso Corp Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
DE2835642A1 (en) 1980-02-28
GB2029641A (en) 1980-03-19
FR2433832A1 (en) 1980-03-14

Similar Documents

Publication Publication Date Title
DE2963058D1 (en) Large scale integrated circuit and method of fabricating the same
JPS5610723A (en) Electronic element and method of manufacturing same
JPS5595391A (en) Printed circuit and method of fabricating same
JPS5571036A (en) Method of manufacturing integrated circuit
JPS5673869A (en) Semiconductor photoelectrode and method of manufacturing same
JPS54145487A (en) Method of fabricating circuit structure and circuit structure
JPS5683096A (en) Hybrid integrated circuit and method of manufacturing same
JPS54116186A (en) Integrated circuit and method of fabricating same
JPS5585052A (en) Semiconductor integrated circuit and method of fabricating same
JPS566497A (en) Method of manufacturing integrated circuit
JPS54121685A (en) Ic and method of fabricating same
JPS55158664A (en) Monolithic integrated structure and method of manufacturing same
JPS5578600A (en) Electronic part series and method of fabricating same
JPS54126487A (en) Integrated circuit and method of fabricating same
JPS5610917A (en) Electronic part and method of manufacturing same
JPS5527697A (en) Bipolar semiconductor integrated circuit and method of manufacturing same
JPS5527699A (en) Monolithic integrated circuit and method of manufacturing same
JPS5586111A (en) Chip type electronic part and method of fabricating same
JPS5511376A (en) Bothhside circuit board and method of manufacturing same
JPS5567173A (en) Selffmatching mesfet and method of manufacturing same
JPS5571018A (en) Method of manufacturing unit ceramic capacitor and capacitor unit
JPS5519895A (en) Method of manufacturing integrated circuit
JPS5515245A (en) Bothhside circuit board and method of manufacturing same
JPS5586198A (en) Circuit board and method of fabricating same
JPS5593286A (en) Electronic circuit and method of fabricating same