JPS5527607A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method

Info

Publication number
JPS5527607A
JPS5527607A JP10005178A JP10005178A JPS5527607A JP S5527607 A JPS5527607 A JP S5527607A JP 10005178 A JP10005178 A JP 10005178A JP 10005178 A JP10005178 A JP 10005178A JP S5527607 A JPS5527607 A JP S5527607A
Authority
JP
Japan
Prior art keywords
stage
sintering
semiconductor device
coating
passivation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10005178A
Other languages
Japanese (ja)
Inventor
Kenichi Goto
Kazuo Watanabe
Toshiaki Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10005178A priority Critical patent/JPS5527607A/en
Publication of JPS5527607A publication Critical patent/JPS5527607A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE: To improve semiconductor device characteristics and reliability by operating at least twice the combination of glass coating and sintering and thereby insuring firm coating of a passivation layer on the exposed part of a PN junction.
CONSTITUTION: First-stage glass powder layer 13 is coated on mesa groove 12 of wafer 11 having a P+NN+ junction. After this by sintering it, first-stage passivation layer 14 is formed. Next, in a similar manner, by coating and sintering a second- stage glass powder layer, a second-stage passivation layer is formed.
COPYRIGHT: (C)1980,JPO&Japio
JP10005178A 1978-08-18 1978-08-18 Semiconductor device manufacturing method Pending JPS5527607A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10005178A JPS5527607A (en) 1978-08-18 1978-08-18 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10005178A JPS5527607A (en) 1978-08-18 1978-08-18 Semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
JPS5527607A true JPS5527607A (en) 1980-02-27

Family

ID=14263688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10005178A Pending JPS5527607A (en) 1978-08-18 1978-08-18 Semiconductor device manufacturing method

Country Status (1)

Country Link
JP (1) JPS5527607A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237325A (en) * 1985-06-27 1987-02-18 Nippon Kokan Kk <Nkk> Calcined lump ore and its production

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237325A (en) * 1985-06-27 1987-02-18 Nippon Kokan Kk <Nkk> Calcined lump ore and its production
US4723995A (en) * 1985-06-27 1988-02-09 Nippon Kokan Kabushiki Kaisha Method for continuously manufacturing fired pellets
JPH024658B2 (en) * 1985-06-27 1990-01-30 Nippon Kokan Kk

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