JPS5524464A - Complex semiconductor system - Google Patents

Complex semiconductor system

Info

Publication number
JPS5524464A
JPS5524464A JP9725178A JP9725178A JPS5524464A JP S5524464 A JPS5524464 A JP S5524464A JP 9725178 A JP9725178 A JP 9725178A JP 9725178 A JP9725178 A JP 9725178A JP S5524464 A JPS5524464 A JP S5524464A
Authority
JP
Japan
Prior art keywords
thickness
dielectric strength
dielectric
plate
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9725178A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6122859B2 (enExample
Inventor
Hitoshi Matsuzaki
Akira Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9725178A priority Critical patent/JPS5524464A/ja
Publication of JPS5524464A publication Critical patent/JPS5524464A/ja
Publication of JPS6122859B2 publication Critical patent/JPS6122859B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W70/68—
    • H10W90/754—

Landscapes

  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP9725178A 1978-08-11 1978-08-11 Complex semiconductor system Granted JPS5524464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9725178A JPS5524464A (en) 1978-08-11 1978-08-11 Complex semiconductor system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9725178A JPS5524464A (en) 1978-08-11 1978-08-11 Complex semiconductor system

Publications (2)

Publication Number Publication Date
JPS5524464A true JPS5524464A (en) 1980-02-21
JPS6122859B2 JPS6122859B2 (enExample) 1986-06-03

Family

ID=14187343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9725178A Granted JPS5524464A (en) 1978-08-11 1978-08-11 Complex semiconductor system

Country Status (1)

Country Link
JP (1) JPS5524464A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326025U (enExample) * 1976-08-12 1978-03-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326025U (enExample) * 1976-08-12 1978-03-06

Also Published As

Publication number Publication date
JPS6122859B2 (enExample) 1986-06-03

Similar Documents

Publication Publication Date Title
JPS5524464A (en) Complex semiconductor system
JPS52135678A (en) Semiconductor device and its productions
JPS5314440A (en) Electronic kitchen range
JPS56118370A (en) Semiconductor device
JPS5279758A (en) Electronic gun
JPS5626661A (en) Molten metal cooling mold of less electromagnetic force transmission loss
JPS55144178A (en) Thermal head
JPS5311768A (en) Electric mosquito avoiding device
JPS5629352A (en) Resin-sealed semiconductor device
JPS5437933A (en) Heater
JPS5361348A (en) Thermal element for typing
JPS5372465A (en) Mounting method of semiconductor to radiator
JPS54150752A (en) Surface-type heat generator
JPS5389661A (en) Semiconductor devcice
JPS5253670A (en) Semiconductor device
GB735450A (en) Electrical condenser
JPS52155918A (en) Cooling unit for electronic devices
JPS57104225A (en) Manufacture of semiconductor device
JPS5592584A (en) Starting circuit for single-phase induction motor
JPS52128592A (en) Supporting device of conductor
JPS5468162A (en) Semiconductor device
JPS5323283A (en) Thyristor
JPS5350689A (en) Electrolumiescence device
JPS52147148A (en) Hair iron
HACKMANN Experimental determination of the electrical conductivity of noble gas plasmas under normal pressure in the temperature range between 15, 000 deg K and 25, 000 deg K(German monograph on experimental determination of noble gas plasma conductivity under normal pressure in high temperature range, covering measurements under electric arc conditions)