JPS5523464B2 - - Google Patents
Info
- Publication number
- JPS5523464B2 JPS5523464B2 JP10311775A JP10311775A JPS5523464B2 JP S5523464 B2 JPS5523464 B2 JP S5523464B2 JP 10311775 A JP10311775 A JP 10311775A JP 10311775 A JP10311775 A JP 10311775A JP S5523464 B2 JPS5523464 B2 JP S5523464B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/097—Lattice strain and defects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Bipolar Transistors (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/516,064 US3961353A (en) | 1974-10-21 | 1974-10-21 | High power semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5151288A JPS5151288A (https=) | 1976-05-06 |
| JPS5523464B2 true JPS5523464B2 (https=) | 1980-06-23 |
Family
ID=24053975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10311775A Expired JPS5523464B2 (https=) | 1974-10-21 | 1975-08-27 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3961353A (https=) |
| JP (1) | JPS5523464B2 (https=) |
| DE (1) | DE2540901C2 (https=) |
| FR (1) | FR2289050A1 (https=) |
| GB (1) | GB1501896A (https=) |
| IT (1) | IT1041936B (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4057823A (en) * | 1976-07-02 | 1977-11-08 | International Business Machines Corporation | Porous silicon dioxide moisture sensor and method for manufacture of a moisture sensor |
| US4111720A (en) * | 1977-03-31 | 1978-09-05 | International Business Machines Corporation | Method for forming a non-epitaxial bipolar integrated circuit |
| KR100434537B1 (ko) * | 1999-03-31 | 2004-06-05 | 삼성전자주식회사 | 다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법 |
| WO2002005349A1 (en) * | 2000-07-12 | 2002-01-17 | California Institute Of Technology | Electrical passivation of silicon-containing surfaces using organic layers |
| DE102006047244B4 (de) * | 2006-10-04 | 2018-01-18 | Infineon Technologies Austria Ag | Halbleiterbauelement mit einem monokristallinen Halbleiterkörper und Verfahren zur Herstellung desselben |
| CN102931081B (zh) * | 2011-08-12 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | 带场阻挡层的半导体器件的制造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3009841A (en) * | 1959-03-06 | 1961-11-21 | Westinghouse Electric Corp | Preparation of semiconductor devices having uniform junctions |
| US2937114A (en) * | 1959-05-29 | 1960-05-17 | Shockley Transistor Corp | Semiconductive device and method |
| GB1209310A (en) * | 1967-04-11 | 1970-10-21 | Lucas Industries Ltd | High voltage n-p-n transistors |
| US3617822A (en) * | 1967-12-05 | 1971-11-02 | Sony Corp | Semiconductor integrated circuit |
| US3649383A (en) * | 1968-03-23 | 1972-03-14 | Matsushita Electric Industrial Co Ltd | Process of fabricating electroluminescent element |
| GB1250377A (https=) * | 1968-08-24 | 1971-10-20 | ||
| JPS4919030B1 (https=) * | 1969-01-29 | 1974-05-14 | ||
| US3640806A (en) * | 1970-01-05 | 1972-02-08 | Nippon Telegraph & Telephone | Semiconductor device and method of producing the same |
| US3703420A (en) * | 1970-03-03 | 1972-11-21 | Ibm | Lateral transistor structure and process for forming the same |
| DE2011701A1 (de) * | 1970-03-12 | 1971-09-30 | Licentia Gmbh | Lateraltransistor |
| JPS4942819B2 (https=) * | 1971-08-04 | 1974-11-16 | ||
| DE2218329A1 (de) * | 1972-04-15 | 1973-10-25 | Bayer Ag | Verfahren zur herstellung von 2trifluormethylimino-derivaten von fuenfring-heterocyclen |
-
1974
- 1974-10-21 US US05/516,064 patent/US3961353A/en not_active Expired - Lifetime
-
1975
- 1975-08-19 FR FR7526334A patent/FR2289050A1/fr active Granted
- 1975-08-27 IT IT26594/75A patent/IT1041936B/it active
- 1975-08-27 JP JP10311775A patent/JPS5523464B2/ja not_active Expired
- 1975-09-01 GB GB35922/75A patent/GB1501896A/en not_active Expired
- 1975-09-13 DE DE2540901A patent/DE2540901C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT1041936B (it) | 1980-01-10 |
| FR2289050B1 (https=) | 1978-04-07 |
| DE2540901A1 (de) | 1976-04-29 |
| GB1501896A (en) | 1978-02-22 |
| JPS5151288A (https=) | 1976-05-06 |
| DE2540901C2 (de) | 1984-10-11 |
| FR2289050A1 (fr) | 1976-05-21 |
| US3961353A (en) | 1976-06-01 |