JPS5522950B2 - - Google Patents
Info
- Publication number
- JPS5522950B2 JPS5522950B2 JP14797978A JP14797978A JPS5522950B2 JP S5522950 B2 JPS5522950 B2 JP S5522950B2 JP 14797978 A JP14797978 A JP 14797978A JP 14797978 A JP14797978 A JP 14797978A JP S5522950 B2 JPS5522950 B2 JP S5522950B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
- H01L31/03765—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table including AIVBIV compounds or alloys, e.g. SiGe, SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/869,194 US4147667A (en) | 1978-01-13 | 1978-01-13 | Photoconductor for GaAs laser addressed devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5498588A JPS5498588A (en) | 1979-08-03 |
| JPS5522950B2 true JPS5522950B2 (US06373033-20020416-M00071.png) | 1980-06-19 |
Family
ID=25353100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14797978A Granted JPS5498588A (en) | 1978-01-13 | 1978-12-01 | Photoconductive element |
Country Status (7)
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS605023U (ja) * | 1983-06-22 | 1985-01-14 | 株式会社日立ホームテック | 電子レンジの出力切換装置 |
| JPS605025U (ja) * | 1983-06-22 | 1985-01-14 | 株式会社日立ホームテック | 電子レンジの出力切換装置 |
| JPS605024U (ja) * | 1983-06-22 | 1985-01-14 | 株式会社日立ホームテック | 電子レンジの出力切換装置 |
| JPS6323858Y2 (US06373033-20020416-M00071.png) * | 1981-01-31 | 1988-06-30 | ||
| JPH0441542Y2 (US06373033-20020416-M00071.png) * | 1987-12-28 | 1992-09-30 |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4565731A (en) * | 1978-05-04 | 1986-01-21 | Canon Kabushiki Kaisha | Image-forming member for electrophotography |
| US4471042A (en) * | 1978-05-04 | 1984-09-11 | Canon Kabushiki Kaisha | Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium |
| JPS54150995A (en) * | 1978-05-19 | 1979-11-27 | Hitachi Ltd | Photo detector |
| EP0011083B1 (en) * | 1978-07-26 | 1982-08-04 | TDK Corporation | Photoelectric device |
| FR2433871A1 (fr) * | 1978-08-18 | 1980-03-14 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
| FR2441264A1 (fr) * | 1978-11-08 | 1980-06-06 | Hitachi Ltd | Ecran sensible aux radiations |
| JPS5591885A (en) * | 1978-12-28 | 1980-07-11 | Canon Inc | Amorphous silicon hydride photoconductive layer |
| JPS55127561A (en) * | 1979-03-26 | 1980-10-02 | Canon Inc | Image forming member for electrophotography |
| US4365015A (en) * | 1979-08-20 | 1982-12-21 | Canon Kabushiki Kaisha | Photosensitive member for electrophotography composed of a photoconductive amorphous silicon |
| JPS56152280A (en) * | 1980-04-25 | 1981-11-25 | Hitachi Ltd | Light receiving surface |
| DE3117037C2 (de) * | 1980-05-08 | 1987-05-14 | Takao Sakai Osaka Kawamura | Elektrophotografisches Aufzeichnungsmaterial |
| JPS58102970A (ja) * | 1981-12-16 | 1983-06-18 | Konishiroku Photo Ind Co Ltd | レ−ザ記録装置 |
| JPS58502194A (ja) * | 1981-12-31 | 1983-12-22 | ウエスタ−ン エレクトリツク カムパニ−，インコ−ポレ−テツド | 光学的記録媒体 |
| US4491626A (en) * | 1982-03-31 | 1985-01-01 | Minolta Camera Kabushiki Kaisha | Photosensitive member |
| US4490450A (en) * | 1982-03-31 | 1984-12-25 | Canon Kabushiki Kaisha | Photoconductive member |
| JPS58189643A (ja) * | 1982-03-31 | 1983-11-05 | Minolta Camera Co Ltd | 感光体 |
| US4617246A (en) * | 1982-11-04 | 1986-10-14 | Canon Kabushiki Kaisha | Photoconductive member of a Ge-Si layer and Si layer |
| US4579797A (en) * | 1983-10-25 | 1986-04-01 | Canon Kabushiki Kaisha | Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant |
| JPS61205948A (ja) * | 1985-03-08 | 1986-09-12 | Canon Inc | レーザー光用の光受容部材 |
| US4843439A (en) * | 1985-08-28 | 1989-06-27 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
| JPH0750332B2 (ja) * | 1985-09-03 | 1995-05-31 | 株式会社リコー | 電子写真感光体 |
| US4711857A (en) * | 1986-08-28 | 1987-12-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
| JPH07117764B2 (ja) * | 1988-04-04 | 1995-12-18 | シャープ株式会社 | 電子写真感光体の製造方法 |
| JPH087448B2 (ja) * | 1988-04-28 | 1996-01-29 | シャープ株式会社 | 電子写真感光体の製造方法 |
| JPH07117762B2 (ja) * | 1988-06-28 | 1995-12-18 | シャープ株式会社 | 電子写真感光体の製造方法 |
| JPH07120060B2 (ja) * | 1988-11-29 | 1995-12-20 | シャープ株式会社 | 電子写真感光体の製造方法 |
| JPH07117763B2 (ja) * | 1988-06-30 | 1995-12-18 | シャープ株式会社 | 電子写真感光体の製造方法 |
| CN101550495B (zh) * | 2008-04-02 | 2010-11-10 | 北京有色金属研究总院 | 一种硅锗合金材料的制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2953529A (en) * | 1957-04-01 | 1960-09-20 | Rca Corp | Semiconductive radiation-sensitive device |
| US3105906A (en) * | 1959-11-24 | 1963-10-01 | Rca Corp | Germanium silicon alloy semiconductor detector for infrared radiation |
| BE638315A (US06373033-20020416-M00071.png) * | 1961-06-09 | |||
| US3979271A (en) * | 1973-07-23 | 1976-09-07 | Westinghouse Electric Corporation | Deposition of solid semiconductor compositions and novel semiconductor materials |
| DD109094A1 (US06373033-20020416-M00071.png) * | 1973-08-22 | 1974-10-12 |
-
1978
- 1978-01-13 US US05/869,194 patent/US4147667A/en not_active Expired - Lifetime
- 1978-10-30 CA CA314,676A patent/CA1111536A/en not_active Expired
- 1978-12-01 JP JP14797978A patent/JPS5498588A/ja active Granted
- 1978-12-21 IT IT31082/78A patent/IT1160377B/it active
- 1978-12-23 DE DE7878101834T patent/DE2862265D1/de not_active Expired
- 1978-12-23 EP EP78101834A patent/EP0003237B1/de not_active Expired
- 1978-12-28 AT AT0934578A patent/AT371949B/de not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6323858Y2 (US06373033-20020416-M00071.png) * | 1981-01-31 | 1988-06-30 | ||
| JPS605023U (ja) * | 1983-06-22 | 1985-01-14 | 株式会社日立ホームテック | 電子レンジの出力切換装置 |
| JPS605025U (ja) * | 1983-06-22 | 1985-01-14 | 株式会社日立ホームテック | 電子レンジの出力切換装置 |
| JPS605024U (ja) * | 1983-06-22 | 1985-01-14 | 株式会社日立ホームテック | 電子レンジの出力切換装置 |
| JPH0441542Y2 (US06373033-20020416-M00071.png) * | 1987-12-28 | 1992-09-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| ATA934578A (de) | 1982-12-15 |
| CA1111536A (en) | 1981-10-27 |
| IT1160377B (it) | 1987-03-11 |
| IT7831082A0 (it) | 1978-12-21 |
| EP0003237B1 (de) | 1983-05-18 |
| DE2862265D1 (en) | 1983-07-07 |
| JPS5498588A (en) | 1979-08-03 |
| AT371949B (de) | 1983-08-10 |
| EP0003237A1 (de) | 1979-08-08 |
| US4147667A (en) | 1979-04-03 |
