JPS5519069B2 - - Google Patents

Info

Publication number
JPS5519069B2
JPS5519069B2 JP5970577A JP5970577A JPS5519069B2 JP S5519069 B2 JPS5519069 B2 JP S5519069B2 JP 5970577 A JP5970577 A JP 5970577A JP 5970577 A JP5970577 A JP 5970577A JP S5519069 B2 JPS5519069 B2 JP S5519069B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5970577A
Other languages
Japanese (ja)
Other versions
JPS52144282A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS52144282A publication Critical patent/JPS52144282A/ja
Publication of JPS5519069B2 publication Critical patent/JPS5519069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP5970577A 1976-05-24 1977-05-23 Protecting circuit Granted JPS52144282A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/689,269 US4100561A (en) 1976-05-24 1976-05-24 Protective circuit for MOS devices

Publications (2)

Publication Number Publication Date
JPS52144282A JPS52144282A (en) 1977-12-01
JPS5519069B2 true JPS5519069B2 (online.php) 1980-05-23

Family

ID=24767729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5970577A Granted JPS52144282A (en) 1976-05-24 1977-05-23 Protecting circuit

Country Status (5)

Country Link
US (1) US4100561A (online.php)
JP (1) JPS52144282A (online.php)
DE (1) DE2722892A1 (online.php)
GB (1) GB1555155A (online.php)
SE (1) SE7705500L (online.php)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2374742A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche pour tensions elevees et son procede de fabrication
JPS574431Y2 (online.php) * 1977-05-20 1982-01-27
US4276555A (en) * 1978-07-13 1981-06-30 International Business Machines Corporation Controlled avalanche voltage transistor and magnetic sensor
US4264941A (en) * 1979-02-14 1981-04-28 National Semiconductor Corporation Protective circuit for insulated gate field effect transistor integrated circuits
US4295176A (en) * 1979-09-04 1981-10-13 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit protection arrangement
SE8105041L (sv) * 1981-08-25 1983-02-26 Ericsson Telefon Ab L M Planartransistor med integrerat overspenningsskydd
JPS5967670A (ja) * 1982-10-12 1984-04-17 Toshiba Corp 半導体装置
JPS6010765A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JPS6068721A (ja) * 1983-09-22 1985-04-19 Fujitsu Ltd Ｅｃｌ回路
JPS60231356A (ja) * 1984-04-28 1985-11-16 Mitsubishi Electric Corp 相補形金属酸化膜半導体集積回路装置
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
GB2185621B (en) * 1985-10-29 1988-12-14 Plessey Co Plc Protection structures
US4990976A (en) * 1987-11-24 1991-02-05 Nec Corporation Semiconductor device including a field effect transistor having a protective diode between source and drain thereof
US5072273A (en) * 1990-05-04 1991-12-10 David Sarnoff Research Center, Inc. Low trigger voltage SCR protection device and structure
US5274262A (en) * 1989-05-17 1993-12-28 David Sarnoff Research Center, Inc. SCR protection structure and circuit with reduced trigger voltage
ES2078343T3 (es) * 1989-05-17 1995-12-16 Sarnoff David Res Center Dispositivo de proteccion scr de bajo voltaje de disparo y estructura.
US5247201A (en) * 1990-02-15 1993-09-21 Siemens Aktiengesellschaft Input protection structure for integrated circuits
KR960002094B1 (ko) * 1990-11-30 1996-02-10 가부시키가이샤 도시바 입력보호회로를 갖춘 반도체장치
US5359211A (en) * 1991-07-18 1994-10-25 Harris Corporation High voltage protection using SCRs
FR2687009B1 (fr) * 1992-01-31 1994-04-29 Sgs Thomson Microelectronics Composant de protection pour circuit automobile.
US5446302A (en) * 1993-12-14 1995-08-29 Analog Devices, Incorporated Integrated circuit with diode-connected transistor for reducing ESD damage
JPH07283405A (ja) * 1994-04-13 1995-10-27 Toshiba Corp 半導体装置の保護回路
US5607867A (en) * 1994-07-15 1997-03-04 Texas Instruments Incorporated Method of forming a controlled low collector breakdown voltage transistor for ESD protection circuits
JP3332123B2 (ja) * 1994-11-10 2002-10-07 株式会社東芝 入力保護回路及びこれを用いた半導体装置
US5789785A (en) * 1995-02-28 1998-08-04 Sgs-Thomson Microelectronics S.R.L. Device for the protection of an integrated circuit against electrostatic discharges
US5629544A (en) * 1995-04-25 1997-05-13 International Business Machines Corporation Semiconductor diode with silicide films and trench isolation
US5731941A (en) * 1995-09-08 1998-03-24 International Business Machines Corporation Electrostatic discharge suppression circuit employing trench capacitor
WO1997010615A1 (en) * 1995-09-11 1997-03-20 Analog Devices, Inc. (Adi) Electrostatic discharge protection network and method
US5663860A (en) * 1996-06-28 1997-09-02 Harris Corporation High voltage protection circuits
KR100214566B1 (ko) * 1997-04-22 1999-08-02 구본준 입력 보호회로
TW399337B (en) * 1998-06-09 2000-07-21 Koninkl Philips Electronics Nv Semiconductor device
US20040028675A1 (en) * 2001-12-07 2004-02-12 Zarlink Semiconductor Ab Compositions for the treatment of lupus
GB2388259B (en) * 2002-04-30 2006-03-29 Zarlink Semiconductor Inc Compact high voltage ESD protection diode
DE102004007972B3 (de) * 2004-02-18 2005-09-01 Infineon Technologies Ag Halbleiterstruktur zum Schutz von integrierten Schaltungen vor ESD-Pulsen
US8557657B1 (en) * 2012-05-18 2013-10-15 International Business Machines Corporation Retrograde substrate for deep trench capacitors
US10411086B2 (en) * 2014-04-07 2019-09-10 Semiconductor Components Industries, Llc High voltage capacitor and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4632972B1 (online.php) * 1967-11-13 1971-09-27
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction

Also Published As

Publication number Publication date
US4100561A (en) 1978-07-11
GB1555155A (en) 1979-11-07
DE2722892A1 (de) 1977-12-08
SE7705500L (sv) 1977-11-25
JPS52144282A (en) 1977-12-01

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