JPS5516414A - Mis type semiconductor device - Google Patents

Mis type semiconductor device

Info

Publication number
JPS5516414A
JPS5516414A JP8842978A JP8842978A JPS5516414A JP S5516414 A JPS5516414 A JP S5516414A JP 8842978 A JP8842978 A JP 8842978A JP 8842978 A JP8842978 A JP 8842978A JP S5516414 A JPS5516414 A JP S5516414A
Authority
JP
Japan
Prior art keywords
stem
pellet
source
metal film
connects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8842978A
Other languages
Japanese (ja)
Inventor
Shigeo Otaka
Masatomo Furuumi
Hideshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8842978A priority Critical patent/JPS5516414A/en
Publication of JPS5516414A publication Critical patent/JPS5516414A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To decrease an input capacity and to reduce oscillation by insulating a pellet from a conductive stem, by connecting a drain to the stem, and by connecting a source through a pellet-connecting metal film to the pellet.
CONSTITUTION: In MISFET comprising a metal stem 1, a lead 4 provided through an insulating glass 3 to the stem, a ceramic plate 5 insulating a pellet 7 and the stem, a metal (Ni, etc.) film 6 formed on the upper surface of the ceramic plate 5, the pellet 7 connected to the metal film 6, and connectors 8aW8c, a gate connector line 8a connects a gate electrode pad and a gate leed, a source connector line 8b connects the source electrode pad and the surface of the metal film 6 or the surface of the metal film 6 and the source leed, and a drain connector line 8c connects a drain electrode pad and the surface of the stem.
COPYRIGHT: (C)1980,JPO&Japio
JP8842978A 1978-07-21 1978-07-21 Mis type semiconductor device Pending JPS5516414A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8842978A JPS5516414A (en) 1978-07-21 1978-07-21 Mis type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8842978A JPS5516414A (en) 1978-07-21 1978-07-21 Mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5516414A true JPS5516414A (en) 1980-02-05

Family

ID=13942533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8842978A Pending JPS5516414A (en) 1978-07-21 1978-07-21 Mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5516414A (en)

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