JPS55160841A - Semiconductor detector - Google Patents

Semiconductor detector

Info

Publication number
JPS55160841A
JPS55160841A JP6933379A JP6933379A JPS55160841A JP S55160841 A JPS55160841 A JP S55160841A JP 6933379 A JP6933379 A JP 6933379A JP 6933379 A JP6933379 A JP 6933379A JP S55160841 A JPS55160841 A JP S55160841A
Authority
JP
Japan
Prior art keywords
substrate
ultrafine particle
particle film
junction element
circuit formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6933379A
Other languages
Japanese (ja)
Inventor
Atsushi Abe
Kuni Ogawa
Masahiro Nishikawa
Satoshi Sekido
Shigeru Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6933379A priority Critical patent/JPS55160841A/en
Publication of JPS55160841A publication Critical patent/JPS55160841A/en
Pending legal-status Critical Current

Links

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To miniaturize the device and to improve the sensitivity by holding a semiconductor substrate, on which a MOS FET made of ultrafine particle film and a circuit formed by a pn-junction element are adjacent to each other, in the air.
CONSTITUTION: The Si substrate 12, in which a gas detecting part of the MOS FET that is provided with an ultrafine particle film of a metal such as Pd or the like and oxides of Sn, Ti and Ni and a temperature detecting part of the circuit formed by the pn-junction element are adjacent to each other in the part corresponding to the gate, is attached to the posts 17' with the wire 18. In this way, when a reducing gas comes in contact with the ultrafine particle film on the Si substrate 12, current is changed, the concentration of the reducing gas can be detected by sensing the change of current, and temperature of the Si substrate 12 is kept constant by feeding an output of the circuit formed by the pn-junction element back to the control circuit.
COPYRIGHT: (C)1980,JPO&Japio
JP6933379A 1979-06-01 1979-06-01 Semiconductor detector Pending JPS55160841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6933379A JPS55160841A (en) 1979-06-01 1979-06-01 Semiconductor detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6933379A JPS55160841A (en) 1979-06-01 1979-06-01 Semiconductor detector

Publications (1)

Publication Number Publication Date
JPS55160841A true JPS55160841A (en) 1980-12-15

Family

ID=13399510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6933379A Pending JPS55160841A (en) 1979-06-01 1979-06-01 Semiconductor detector

Country Status (1)

Country Link
JP (1) JPS55160841A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4931851A (en) * 1986-03-12 1990-06-05 Thorn Emi Plc Gas sensitive device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4931851A (en) * 1986-03-12 1990-06-05 Thorn Emi Plc Gas sensitive device

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