JPS55160461A - Complementary type mos circuit - Google Patents

Complementary type mos circuit

Info

Publication number
JPS55160461A
JPS55160461A JP6676379A JP6676379A JPS55160461A JP S55160461 A JPS55160461 A JP S55160461A JP 6676379 A JP6676379 A JP 6676379A JP 6676379 A JP6676379 A JP 6676379A JP S55160461 A JPS55160461 A JP S55160461A
Authority
JP
Japan
Prior art keywords
voltage
terminal
mos
stage
threshold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6676379A
Other languages
Japanese (ja)
Inventor
Mitsuo Isobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6676379A priority Critical patent/JPS55160461A/en
Publication of JPS55160461A publication Critical patent/JPS55160461A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To lower the threshold voltage of the complementary type MOS circuit without increasing the occupying area thereof by connecting C-MOS inverters in two stages, and connecting N channel elements between the output and input terminals of the second stage and between the drain and the power terminal of the P channel at the first stage. CONSTITUTION:Assuming that the threshold voltages of MOS-FETQ21, Q23, Q25 are VTN, the threshold voltages of MOS-FETQ22, Q24, Q26 are VTP, and the gm are equal with Q21 and Q21 while the gm of the Q26 being sufficiently low. A voltage VDD is applied to the terminal 21, and the terminal 22 is grounded. When the Q26 is truned on or off in response to the L or H level of the terminal 23 to exactly present the same level at the terminal 25, the threshold voltage of the inverter in the first stage is lowered to half of the maximum value of the voltage of the terminal 26, that is, (VDD-VTN)/2. When an intermediate voltage V1 is applied to the input 23, the gate voltage of the Q22 is lowered at the voltage V26 of the terminal 26 to V26-V1- ¦VPT¦. IN this manner the Q25 is disposed to lower the threshold voltage of the circuit without increasing the Q21 so as to diminish the power consumption with respect to the intermediate input voltage.
JP6676379A 1979-05-31 1979-05-31 Complementary type mos circuit Pending JPS55160461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6676379A JPS55160461A (en) 1979-05-31 1979-05-31 Complementary type mos circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6676379A JPS55160461A (en) 1979-05-31 1979-05-31 Complementary type mos circuit

Publications (1)

Publication Number Publication Date
JPS55160461A true JPS55160461A (en) 1980-12-13

Family

ID=13325237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6676379A Pending JPS55160461A (en) 1979-05-31 1979-05-31 Complementary type mos circuit

Country Status (1)

Country Link
JP (1) JPS55160461A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106413A2 (en) * 1982-10-18 1984-04-25 Koninklijke Philips Electronics N.V. Semiconductor structure having a voltage level shifter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106413A2 (en) * 1982-10-18 1984-04-25 Koninklijke Philips Electronics N.V. Semiconductor structure having a voltage level shifter

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