JPS55160396A - Capacitor memory - Google Patents

Capacitor memory

Info

Publication number
JPS55160396A
JPS55160396A JP6588879A JP6588879A JPS55160396A JP S55160396 A JPS55160396 A JP S55160396A JP 6588879 A JP6588879 A JP 6588879A JP 6588879 A JP6588879 A JP 6588879A JP S55160396 A JPS55160396 A JP S55160396A
Authority
JP
Japan
Prior art keywords
capacitor
mosfets
data
bus
wand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6588879A
Other languages
Japanese (ja)
Other versions
JPS6130357B2 (en
Inventor
Norishige Tanaka
Yasoji Suzuki
Kiyoshi Kanekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6588879A priority Critical patent/JPS55160396A/en
Publication of JPS55160396A publication Critical patent/JPS55160396A/en
Publication of JPS6130357B2 publication Critical patent/JPS6130357B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE: To improve the yield of a capacitor memory by providing respective memory cells with MOSFETs whose output terminals are connected in parallel and then by putting one of MOSFETs into operation for data storage in a capacitor.
CONSTITUTION: Each memory cell 21 is formed of two MOSFETs 22A and 22a whose drains are connected in common and capacitor 23 connected between the common connection point between those drains and a reference potential point. Then, respective cells are connected to buses A1Wand a1W of two sequences and data buses B1Wand b1W of two sequences. Namely, capacitor 23 is provided with two charging paths. Therefore, if an address bus or data bus is broken or meets another wiring, the bus is changed over to put the other FET into operation, thereby storing data in the capacitor. Thus, the yield can be improved.
COPYRIGHT: (C)1980,JPO&Japio
JP6588879A 1979-05-28 1979-05-28 Capacitor memory Granted JPS55160396A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6588879A JPS55160396A (en) 1979-05-28 1979-05-28 Capacitor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6588879A JPS55160396A (en) 1979-05-28 1979-05-28 Capacitor memory

Publications (2)

Publication Number Publication Date
JPS55160396A true JPS55160396A (en) 1980-12-13
JPS6130357B2 JPS6130357B2 (en) 1986-07-12

Family

ID=13299952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6588879A Granted JPS55160396A (en) 1979-05-28 1979-05-28 Capacitor memory

Country Status (1)

Country Link
JP (1) JPS55160396A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS615499A (en) * 1984-04-02 1986-01-11 ザ　ボ−ド　オブ　トラステイ−ズ　オブ　ザ　リ−ランド　スタンフオ−ド　ジユニア　ユニバ−シテイ Data memory array device and sampling method for analog signal sample value

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS615499A (en) * 1984-04-02 1986-01-11 ザ　ボ−ド　オブ　トラステイ−ズ　オブ　ザ　リ−ランド　スタンフオ−ド　ジユニア　ユニバ−シテイ Data memory array device and sampling method for analog signal sample value

Also Published As

Publication number Publication date
JPS6130357B2 (en) 1986-07-12

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