JPS55158664A - Monolithic integrated structure and method of manufacturing same - Google Patents

Monolithic integrated structure and method of manufacturing same

Info

Publication number
JPS55158664A
JPS55158664A JP7128680A JP7128680A JPS55158664A JP S55158664 A JPS55158664 A JP S55158664A JP 7128680 A JP7128680 A JP 7128680A JP 7128680 A JP7128680 A JP 7128680A JP S55158664 A JPS55158664 A JP S55158664A
Authority
JP
Japan
Prior art keywords
integrated structure
manufacturing same
monolithic integrated
monolithic
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7128680A
Other languages
English (en)
Japanese (ja)
Inventor
Kuwaran Jiyannbateisuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS55158664A publication Critical patent/JPS55158664A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP7128680A 1979-05-29 1980-05-28 Monolithic integrated structure and method of manufacturing same Pending JPS55158664A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7913630A FR2458146A1 (fr) 1979-05-29 1979-05-29 Structure integree comportant un transistor et trois diodes antisaturation

Publications (1)

Publication Number Publication Date
JPS55158664A true JPS55158664A (en) 1980-12-10

Family

ID=9225965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7128680A Pending JPS55158664A (en) 1979-05-29 1980-05-28 Monolithic integrated structure and method of manufacturing same

Country Status (3)

Country Link
EP (1) EP0020233A1 (OSRAM)
JP (1) JPS55158664A (OSRAM)
FR (1) FR2458146A1 (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658260A (en) * 1979-10-16 1981-05-21 Matsushita Electronics Corp Darlington junction type transistor and production thereof
JPS58102549A (ja) * 1981-12-14 1983-06-18 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路
JPS6229157A (ja) * 1985-07-29 1987-02-07 New Japan Radio Co Ltd ２端子素子

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043857A (ja) * 1983-08-20 1985-03-08 Mitsubishi Electric Corp 固体撮像装置とその製造方法
DE3403327A1 (de) * 1984-01-31 1985-08-01 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur minimierung der wirkung parasitaerer transistorfunktionselemente in integrierten bipolaren halbleiterschaltkreisen
JPS62250661A (ja) * 1986-04-23 1987-10-31 Fuji Electric Co Ltd 半導体装置
DE69109884T2 (de) * 1990-02-09 1995-10-26 Canon Kk Tintenstrahlaufzeichnungssystem.
EP0630051B1 (en) * 1993-06-15 1999-09-01 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrated structure bipolar switching transistor with controlled storage time
DE10046936A1 (de) * 2000-09-21 2002-04-18 Infineon Technologies Ag Diodenvorrichtung aus zwei monolithisch miteinander integrierten Dioden

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770519A (en) * 1970-08-05 1973-11-06 Ibm Isolation diffusion method for making reduced beta transistor or diodes
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch
IN141922B (OSRAM) * 1974-08-19 1977-05-07 Rca Corp
US4072981A (en) * 1975-03-25 1978-02-07 Texas Instruments Incorporated Fast switching Darlington circuit
JPS52149666U (OSRAM) * 1976-05-11 1977-11-12
FR2377706A1 (fr) * 1977-01-12 1978-08-11 Radiotechnique Compelec Dispositif semi-conducteur integre du type darlington et son procede de fabrication

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658260A (en) * 1979-10-16 1981-05-21 Matsushita Electronics Corp Darlington junction type transistor and production thereof
JPS58102549A (ja) * 1981-12-14 1983-06-18 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路
JPS6229157A (ja) * 1985-07-29 1987-02-07 New Japan Radio Co Ltd ２端子素子

Also Published As

Publication number Publication date
FR2458146B1 (OSRAM) 1983-01-21
FR2458146A1 (fr) 1980-12-26
EP0020233A1 (fr) 1980-12-10

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