JPS55154791A - Light transmitter - Google Patents

Light transmitter

Info

Publication number
JPS55154791A
JPS55154791A JP6217479A JP6217479A JPS55154791A JP S55154791 A JPS55154791 A JP S55154791A JP 6217479 A JP6217479 A JP 6217479A JP 6217479 A JP6217479 A JP 6217479A JP S55154791 A JPS55154791 A JP S55154791A
Authority
JP
Japan
Prior art keywords
light
waveguide
oscillator
gate
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6217479A
Other languages
Japanese (ja)
Other versions
JPS6154278B2 (en
Inventor
Akira Mita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6217479A priority Critical patent/JPS55154791A/en
Publication of JPS55154791A publication Critical patent/JPS55154791A/en
Publication of JPS6154278B2 publication Critical patent/JPS6154278B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers

Abstract

PURPOSE:To obtain high frequency light signal from a light transmitter by forming first and second light waveguides through an isolation groove on a single semiconductor substrate and arranging a light oscillator on one waveguide, a light gate disposed at both sides of the oscillator, and one light gate on the other waveguide to couple them in operation. CONSTITUTION:A light waveguide and a buffer layer having lower refractive index than the waveguide are laminated on a semiconductor substrate 1 made of hybrid crystal of elements in Groups III to V in periodic Table, a deep groove is formed in the substrate 1, and two light waveguides made of the light waveguides 2, 6 and buffer layers 3, 3' are produced. Then, there are arranged a light oscillator 4 for amplifying the light signal propagating in the waveguide 2 on one buffer layer 3, and light gates 5, 5' made of electrophoto absorption effect cells for executing gate operation for the light signal at both sides of the oscillator 4. One light gate 7 is provided on the other buffer layer 3', to select the light pulse via the oscillator 4, the gates 5, 5' so as to abruptly modify the light via the gate 7 into sharp modified light.
JP6217479A 1979-05-22 1979-05-22 Light transmitter Granted JPS55154791A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6217479A JPS55154791A (en) 1979-05-22 1979-05-22 Light transmitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6217479A JPS55154791A (en) 1979-05-22 1979-05-22 Light transmitter

Publications (2)

Publication Number Publication Date
JPS55154791A true JPS55154791A (en) 1980-12-02
JPS6154278B2 JPS6154278B2 (en) 1986-11-21

Family

ID=13192489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6217479A Granted JPS55154791A (en) 1979-05-22 1979-05-22 Light transmitter

Country Status (1)

Country Link
JP (1) JPS55154791A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6247620A (en) * 1985-08-27 1987-03-02 Nec Corp Waveguide type optical switch

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6328292A (en) * 1986-07-18 1988-02-05 Sanyo Electric Co Ltd Feed controlling device refrigerating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6247620A (en) * 1985-08-27 1987-03-02 Nec Corp Waveguide type optical switch

Also Published As

Publication number Publication date
JPS6154278B2 (en) 1986-11-21

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