JPS55154768A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55154768A JPS55154768A JP6283079A JP6283079A JPS55154768A JP S55154768 A JPS55154768 A JP S55154768A JP 6283079 A JP6283079 A JP 6283079A JP 6283079 A JP6283079 A JP 6283079A JP S55154768 A JPS55154768 A JP S55154768A
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrode
- source
- aluminum
- recrystallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 238000001953 recrystallisation Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To shorten the steps of manufacturing a semiconductor device by simultaneously executing the recrystallization of source and drain regions of a unipolar transistor such as a MOSFET or the like as formed by an ion implantation and the heat treatment for alloying the electrode when forming metallic electrodes connected to the source and drain regions of the transistor. CONSTITUTION:With Si3N4 or SiO2 as a mask in an n-type semiconductor substrate p-type impurity ion such as BF2 or the like is implanted thereto to form amorphous region 7 having a prescribed depth. Then, aluminum is evaporated on the entire surface, photoetched to retain only the aluminum electrode 8 connected to the region 7, heat treated at 550 deg.C for 20min to recrystallize from the bottom of the region 7 upwardly so as to form a high density recrystallized region 9. Simultaneously, aluminum silicide 10 is produced between the residual regions 7 and 8 thereon without recrystallization so as to obtain a preferable electrode connection between the region 7 and the electrode 8 as a source or drain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6283079A JPS55154768A (en) | 1979-05-22 | 1979-05-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6283079A JPS55154768A (en) | 1979-05-22 | 1979-05-22 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55154768A true JPS55154768A (en) | 1980-12-02 |
Family
ID=13211620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6283079A Pending JPS55154768A (en) | 1979-05-22 | 1979-05-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55154768A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6313036B1 (en) | 1997-01-24 | 2001-11-06 | Nec Corporation | Method for producing semiconductor device |
-
1979
- 1979-05-22 JP JP6283079A patent/JPS55154768A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6313036B1 (en) | 1997-01-24 | 2001-11-06 | Nec Corporation | Method for producing semiconductor device |
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