JPS55151356A - Resin sealed semiconductor device - Google Patents

Resin sealed semiconductor device

Info

Publication number
JPS55151356A
JPS55151356A JP5994179A JP5994179A JPS55151356A JP S55151356 A JPS55151356 A JP S55151356A JP 5994179 A JP5994179 A JP 5994179A JP 5994179 A JP5994179 A JP 5994179A JP S55151356 A JPS55151356 A JP S55151356A
Authority
JP
Japan
Prior art keywords
lead powder
resin
thermosetting resin
semiconductor device
variation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5994179A
Other languages
Japanese (ja)
Inventor
Hiroshi Narita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5994179A priority Critical patent/JPS55151356A/en
Publication of JPS55151356A publication Critical patent/JPS55151356A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To shut off an X-ray irradiated from other electric apparatus and to prevent the variation and decrease of the characteristics and life of a resin sealed semiconductor device by sealing the device with thermosetting resin mixture mixed with lead powder treated in surface insulation or mere lead powder. CONSTITUTION:The semiconductor element 5 is secured to a metallic support 4a, and wire bonded to other metallic supports 4b, 4c in an assembly. This is sealed with thermosetting resin mixture. This mixture contains epoxy resin, polyester resin, silicone resin as thermosetting resin 1 with metallic oxide powder 2 such as alumina, silica, magnesia and lead powder 3, together with mold releasing agent, accelerator and pigment and the like. The surface of the lead powder particles are oxidized with oxidizer to surface insulation treat it. In this manner, the lead powder is uniformly dispersed to prevent the X-ray from passing through the electric apparatus such as television and enhance the life and the variation in the characteristics of the element.
JP5994179A 1979-05-16 1979-05-16 Resin sealed semiconductor device Pending JPS55151356A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5994179A JPS55151356A (en) 1979-05-16 1979-05-16 Resin sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5994179A JPS55151356A (en) 1979-05-16 1979-05-16 Resin sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPS55151356A true JPS55151356A (en) 1980-11-25

Family

ID=13127663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5994179A Pending JPS55151356A (en) 1979-05-16 1979-05-16 Resin sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS55151356A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134448A (en) * 1983-12-23 1985-07-17 Nippon Telegr & Teleph Corp <Ntt> Package for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60134448A (en) * 1983-12-23 1985-07-17 Nippon Telegr & Teleph Corp <Ntt> Package for semiconductor device

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