JPS55142484A - Memory circuit unit - Google Patents

Memory circuit unit

Info

Publication number
JPS55142484A
JPS55142484A JP4956079A JP4956079A JPS55142484A JP S55142484 A JPS55142484 A JP S55142484A JP 4956079 A JP4956079 A JP 4956079A JP 4956079 A JP4956079 A JP 4956079A JP S55142484 A JPS55142484 A JP S55142484A
Authority
JP
Japan
Prior art keywords
information
defection
circuits
feti
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4956079A
Other languages
Japanese (ja)
Other versions
JPS5827920B2 (en
Inventor
Shigenobu Sakai
Shigeto Koda
Hideo Kikuchi
Yoshitaka Kitano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP54049560A priority Critical patent/JPS5827920B2/en
Publication of JPS55142484A publication Critical patent/JPS55142484A/en
Publication of JPS5827920B2 publication Critical patent/JPS5827920B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To enable to prevent mis-output without large scale and complicated processing, by providing the two systems using two memory circuits and two defection detecting circuits. CONSTITUTION:The unit consists of the memory circuits M, M' made of MOSFETs and defection detecting circuits 31, 32. If the circuit M has a failure of output line nonshort circuit, the information of 1 is given to the output lines A, A' of the circuits M, M' with the timing pulse phip, and if the voltage of FETi, FET'i is the threshold voltage V1, the storage circuit 21 and the stored information SHO, SHO' are respectively obtained at 1 or at 0, 1 with the control voltage Vc, the circuits 31, 31' are conductive or nonconductive and the information SH1, SH1' are obtained at 0. If FETi, FET'i are conductive with the defection detecting voltage VD, the information of 1 or 0 stored in FETi, FET'i is read out without error. Further, if the circuit M has the output line shortage, the information stored in FETi, FET'i is read out without error. Accordingly, even if one of the memory circuits M, M' has a defection but another has no defection, no error is output to the information at the output terminal 43.
JP54049560A 1979-04-21 1979-04-21 memory circuit device Expired JPS5827920B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54049560A JPS5827920B2 (en) 1979-04-21 1979-04-21 memory circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54049560A JPS5827920B2 (en) 1979-04-21 1979-04-21 memory circuit device

Publications (2)

Publication Number Publication Date
JPS55142484A true JPS55142484A (en) 1980-11-07
JPS5827920B2 JPS5827920B2 (en) 1983-06-13

Family

ID=12834580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54049560A Expired JPS5827920B2 (en) 1979-04-21 1979-04-21 memory circuit device

Country Status (1)

Country Link
JP (1) JPS5827920B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051229A (en) * 1982-01-28 1991-09-24 United Kingdom Atomic Energy Authority Thermally responsive trigger devices and their use in shut-down devices for nuclear reactors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051229A (en) * 1982-01-28 1991-09-24 United Kingdom Atomic Energy Authority Thermally responsive trigger devices and their use in shut-down devices for nuclear reactors

Also Published As

Publication number Publication date
JPS5827920B2 (en) 1983-06-13

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