JPS55140705A - Formation of metal or mixed metal chalcogenide film - Google Patents

Formation of metal or mixed metal chalcogenide film

Info

Publication number
JPS55140705A
JPS55140705A JP5112680A JP5112680A JPS55140705A JP S55140705 A JPS55140705 A JP S55140705A JP 5112680 A JP5112680 A JP 5112680A JP 5112680 A JP5112680 A JP 5112680A JP S55140705 A JPS55140705 A JP S55140705A
Authority
JP
Japan
Prior art keywords
metal
formation
chalcogenide film
mixed
mixed metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5112680A
Other languages
English (en)
Japanese (ja)
Inventor
Eru Sansureguretsuto Jiyosefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of JPS55140705A publication Critical patent/JPS55140705A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1245—Inorganic substrates other than metallic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1291—Process of deposition of the inorganic material by heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/287—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C03C2218/112—Deposition methods from solutions or suspensions by spraying
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency
    • Y02P20/133—Renewable energy sources, e.g. sunlight
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Structural Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP5112680A 1979-04-19 1980-04-19 Formation of metal or mixed metal chalcogenide film Pending JPS55140705A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/031,421 US4242374A (en) 1979-04-19 1979-04-19 Process for thin film deposition of metal and mixed metal chalcogenides displaying semi-conductor properties

Publications (1)

Publication Number Publication Date
JPS55140705A true JPS55140705A (en) 1980-11-04

Family

ID=21859370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5112680A Pending JPS55140705A (en) 1979-04-19 1980-04-19 Formation of metal or mixed metal chalcogenide film

Country Status (5)

Country Link
US (1) US4242374A (Direct)
JP (1) JPS55140705A (Direct)
DE (1) DE3015060A1 (Direct)
FR (1) FR2454473A1 (Direct)
NL (1) NL8002315A (Direct)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62146276A (ja) * 1985-12-19 1987-06-30 Matsushita Electric Ind Co Ltd 硫化物薄膜の形成方法
JPS62146271A (ja) * 1985-12-19 1987-06-30 Matsushita Electric Ind Co Ltd 硫化カドミウム薄膜の形成方法
JP2009084153A (ja) * 1999-04-06 2009-04-23 Helmholtz-Zentrum Berlin Fuer Materialien & Energie Gmbh 薄い、難溶性の被覆の製造方法
JP2018009201A (ja) * 2016-07-11 2018-01-18 富士通株式会社 層状カルコゲナイド膜の形成方法及び半導体装置の製造方法

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US4360542A (en) * 1981-03-31 1982-11-23 Argus Chemical Corporation Process for the preparation of thin films of cadmium sulfide and precursor solutions of cadmium ammonia thiocyanate complex useful therein
US4681775A (en) * 1982-12-10 1987-07-21 North American Philips Consumer Electronics Corp. CRT with optical window and method
CA1265922A (en) * 1984-07-27 1990-02-20 Helmut Tributsch Photoactive pyrite layer and process for making and using same
US4996083A (en) * 1987-02-19 1991-02-26 Donnelly Corporation Method for deposition of electrochromic layers
JPS6436086A (en) * 1987-07-31 1989-02-07 Canon Kk Functional deposition film
US4959247A (en) * 1987-12-14 1990-09-25 Donnelly Corporation Electrochromic coating and method for making same
JPH10273783A (ja) * 1997-03-31 1998-10-13 Yazaki Corp カルコパイライト光吸収膜の製造法
US20030070920A1 (en) * 1997-05-01 2003-04-17 Ashish Shah Electrode for use in a capacitor
US5926362A (en) 1997-05-01 1999-07-20 Wilson Greatbatch Ltd. Hermetically sealed capacitor
US5920455A (en) 1997-05-01 1999-07-06 Wilson Greatbatch Ltd. One step ultrasonically coated substrate for use in a capacitor
US5894403A (en) * 1997-05-01 1999-04-13 Wilson Greatbatch Ltd. Ultrasonically coated substrate for use in a capacitor
US5948176A (en) * 1997-09-29 1999-09-07 Midwest Research Institute Cadmium-free junction fabrication process for CuInSe2 thin film solar cells
US6268014B1 (en) 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
DE59914444D1 (de) * 1998-03-19 2007-09-20 Hahn Meitner Inst Berlin Gmbh Verfahren und anordnung zur herstellung dünner metallchalkogenid-schichten
DE19831214C2 (de) * 1998-03-19 2003-07-03 Hahn Meitner Inst Berlin Gmbh Verfahren und Anordnung zur Herstellung dünner Metallchalkogenid-Schichten
US6197365B1 (en) * 1999-03-30 2001-03-06 Xcellsis Gmbh Process for manufacturing a catalytic material
JP2003265962A (ja) * 2002-03-18 2003-09-24 Nittetsu Mining Co Ltd 光触媒およびその製造方法
JP4357801B2 (ja) * 2002-06-25 2009-11-04 日鉄鉱業株式会社 高活性光触媒およびその製造方法
US7026713B2 (en) * 2003-12-17 2006-04-11 Hewlett-Packard Development Company, L.P. Transistor device having a delafossite material
CH697007A5 (fr) 2004-05-03 2008-03-14 Solaronix Sa Procédé pour produire un composé chalcopyrite en couche mince.
US7833904B2 (en) * 2005-06-16 2010-11-16 The Trustees Of Columbia University In The City Of New York Methods for fabricating nanoscale electrodes and uses thereof
US20090169723A1 (en) * 2007-10-02 2009-07-02 University Of Delaware I-iii-vi2 photovoltaic absorber layers
US8613973B2 (en) * 2007-12-06 2013-12-24 International Business Machines Corporation Photovoltaic device with solution-processed chalcogenide absorber layer
US7906182B1 (en) 2008-01-17 2011-03-15 University Of South Florida Method of thin film electrospray deposition
US20110094557A1 (en) * 2009-10-27 2011-04-28 International Business Machines Corporation Method of forming semiconductor film and photovoltaic device including the film
US10147604B2 (en) * 2009-10-27 2018-12-04 International Business Machines Corporation Aqueous-based method of forming semiconductor film and photovoltaic device including the film
TWI408825B (zh) * 2010-09-24 2013-09-11 Univ Nat Chiao Tung 一種具有週期性形狀結構透明導電極之太陽能電池裝置
US8119513B1 (en) 2010-11-22 2012-02-21 General Electric Company Method for making cadmium sulfide layer
WO2012107256A1 (en) 2011-02-10 2012-08-16 Empa Process for producing light absorbing chalcogenide films
US20150118487A1 (en) * 2013-10-25 2015-04-30 Colin A. Wolden Plasma-assisted nanofabrication of two-dimensional metal chalcogenide layers
US20160233322A1 (en) * 2015-02-06 2016-08-11 G-Force Nanotechnology Ltd. Method for fabricating chalcogenide films
WO2018044237A1 (en) * 2016-09-02 2018-03-08 Nanyang Technological University Chalcogenide film, device including, and method of forming the same

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NL202685A (Direct) * 1955-12-08
US3081200A (en) * 1959-04-10 1963-03-12 Armour Res Found Method of applying an oxide coating onto a non-porous refractory substrate
CH472509A (de) * 1965-07-09 1969-05-15 Ibm Verfahren zur Herstellung dünner Schichten von Chalkogeniden der Lanthaniden
US3657006A (en) * 1969-11-06 1972-04-18 Peter D Fisher Method and apparatus for depositing doped and undoped glassy chalcogenide films at substantially atmospheric pressure
US3920860A (en) * 1970-09-28 1975-11-18 Siemens Ag Method for producing mixed crystal layers from cds and cdse
DE2136202A1 (de) * 1971-07-20 1973-02-01 Bosch Fernsehanlagen Vidikon - target
US3840389A (en) * 1972-07-05 1974-10-08 Gulf Research Development Co Process for coating refractory oxides
IT996924B (it) * 1972-12-21 1975-12-10 Glaverbel Procedimento per formare uno strato di ossido metallico
US4095004A (en) * 1975-03-31 1978-06-13 Hughes Aircraft Company Process for low temperature stoichiometric recrystallization of compound semiconductor films
US4095006A (en) * 1976-03-26 1978-06-13 Photon Power, Inc. Cadmium sulfide film
US4143235A (en) * 1977-12-30 1979-03-06 Chevron Research Company Cadmium sulfide photovoltaic cell and method of fabrication

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62146276A (ja) * 1985-12-19 1987-06-30 Matsushita Electric Ind Co Ltd 硫化物薄膜の形成方法
JPS62146271A (ja) * 1985-12-19 1987-06-30 Matsushita Electric Ind Co Ltd 硫化カドミウム薄膜の形成方法
JP2009084153A (ja) * 1999-04-06 2009-04-23 Helmholtz-Zentrum Berlin Fuer Materialien & Energie Gmbh 薄い、難溶性の被覆の製造方法
JP2018009201A (ja) * 2016-07-11 2018-01-18 富士通株式会社 層状カルコゲナイド膜の形成方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
US4242374A (en) 1980-12-30
FR2454473B1 (Direct) 1984-01-27
DE3015060A1 (de) 1980-10-30
NL8002315A (nl) 1980-10-21
FR2454473A1 (fr) 1980-11-14

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